Taiwan semiconductor manufacturing company, ltd. (20240213367). TWO-DIMENSIONAL (2D) MATERIAL FOR OXIDE SEMICONDUCTOR (OS) FERROELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICE simplified abstract

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TWO-DIMENSIONAL (2D) MATERIAL FOR OXIDE SEMICONDUCTOR (OS) FERROELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICE

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Mauricio Manfrini of Zhubei City (TW)

Chih-Yu Chang of New Taipei City (TW)

Sai-Hooi Yeong of Zhubei City (TW)

TWO-DIMENSIONAL (2D) MATERIAL FOR OXIDE SEMICONDUCTOR (OS) FERROELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240213367 titled 'TWO-DIMENSIONAL (2D) MATERIAL FOR OXIDE SEMICONDUCTOR (OS) FERROELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICE

The present disclosure pertains to a ferroelectric field-effect transistor (FeFET) device. In some embodiments, the FeFET device includes a ferroelectric layer with a gate electrode on one side and an oxide semiconductor (OS) channel layer on the other side, along with source/drain regions and a 2D contacting layer.

  • Ferroelectric field-effect transistor (FeFET) device
  • Ferroelectric layer with a gate electrode on one side
  • Oxide semiconductor (OS) channel layer on the other side
  • Source/drain regions on opposite sides of the OS channel layer
  • 2D contacting layer for enhanced performance

Potential Applications:

  • Memory devices
  • Logic circuits
  • Sensor applications

Problems Solved:

  • Improved performance and reliability of field-effect transistors
  • Enhanced data retention in memory devices

Benefits:

  • Higher speed and lower power consumption
  • Increased data storage capacity
  • Improved device longevity

Commercial Applications:

  • Semiconductor industry for memory and logic applications
  • Electronics manufacturing for sensor devices

Questions about Ferroelectric Field-Effect Transistors: 1. How does the ferroelectric layer impact the performance of the FeFET device? 

  - The ferroelectric layer enables non-volatile memory operation and low-power consumption.

2. What are the advantages of using an oxide semiconductor (OS) channel layer in FeFET devices? 

  - The OS channel layer provides high carrier mobility and compatibility with ferroelectric materials.


Original Abstract Submitted

the present disclosure relates a ferroelectric field-effect transistor (fefet) device. in some embodiments, the fefet device includes a ferroelectric layer having a first side and a second side opposite to the first side and a gate electrode disposed along the first side of the ferroelectric layer. the fefet device further includes an os channel layer disposed along the second side of the ferroelectric layer opposite to the first side and a pair of source/drain regions disposed on opposite sides of the os channel layer. the fefet device further includes a 2d contacting layer disposed along the os channel layer. the os channel layer has a first doping type, and the 2d contacting layer has a second doping type different than the first doping type.

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