Taiwan semiconductor manufacturing company, ltd. (20240213347). NANOSHEET FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING simplified abstract
Contents
NANOSHEET FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
NANOSHEET FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240213347 titled 'NANOSHEET FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING
The semiconductor device described in the abstract features a fin protruding above a substrate, source/drain regions over the fin, nanosheets between the source/drain regions, and a gate structure over the fin and between the source/drain regions. The gate structure includes a gate dielectric material around each of the nanosheets, a first liner material around the gate dielectric material, a work function material around the first liner material, a second liner material around the work function material, and a gate electrode material around at least portions of the second liner material.
- Fin protruding above a substrate
- Source/drain regions over the fin
- Nanosheets between the source/drain regions
- Gate structure with multiple layers including gate dielectric material, liner materials, work function material, and gate electrode material
Potential Applications: - Advanced semiconductor devices - High-performance electronics - Nanotechnology research
Problems Solved: - Enhancing device performance - Improving efficiency in electronic components
Benefits: - Increased speed and efficiency - Enhanced functionality in electronic devices
Commercial Applications: Title: Advanced Semiconductor Devices for High-Performance Electronics This technology could be utilized in the development of cutting-edge electronic devices for various industries, including telecommunications, computing, and consumer electronics. The improved performance and efficiency offered by this innovation could lead to significant advancements in the market.
Questions about the technology: 1. How does the gate structure contribute to the overall performance of the semiconductor device? 2. What are the potential challenges in implementing this technology on a larger scale?
Original Abstract Submitted
a semiconductor device includes a fin protruding above a substrate; source/drain regions over the fin; nanosheets between the source/drain regions; and a gate structure over the fin and between the source/drain regions. the gate structure includes: a gate dielectric material around each of the nanosheets; a first liner material around the gate dielectric material; a work function material around the first liner material; a second liner material around the work function material; and a gate electrode material around at least portions of the second liner material.
