Taiwan semiconductor manufacturing company, ltd. (20240213344). SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract
Contents
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Shih-Yao Lin of New Taipei City (TW)
Chih-Han Lin of Hsinchu City (TW)
Hsiao Wen Lee of Hsinchu City (TW)
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240213344 titled 'SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
The abstract describes a semiconductor device with multiple vertically separated semiconductor layers, each extending along a first lateral direction. The device includes a gate structure that extends along a second lateral direction and wraps around each semiconductor layer. The lower portion of the gate structure consists of first gate sections aligned with the semiconductor layers, each with ends that present a curved profile along the second lateral direction.
- The semiconductor device features vertically separated semiconductor layers and a gate structure wrapping around each layer.
- The gate structure includes first gate sections aligned with the semiconductor layers, presenting a curved profile.
- The innovation allows for precise control and manipulation of the semiconductor layers for enhanced performance.
Potential Applications: - This technology can be applied in advanced semiconductor devices for improved functionality. - It can be used in high-performance electronic devices requiring precise control over semiconductor layers.
Problems Solved: - Provides a solution for controlling and manipulating vertically separated semiconductor layers. - Enhances the performance and efficiency of semiconductor devices.
Benefits: - Improved functionality and performance of semiconductor devices. - Enhanced control and manipulation of semiconductor layers for optimized operation.
Commercial Applications: Title: Advanced Semiconductor Devices with Enhanced Control This technology can be utilized in the development of high-performance electronic devices, such as smartphones, computers, and other consumer electronics. It can also find applications in industrial settings where precise control over semiconductor layers is crucial for efficient operation.
Questions about the technology: 1. How does the gate structure enhance the performance of the semiconductor device? - The gate structure allows for precise control and manipulation of the vertically separated semiconductor layers, leading to improved functionality and performance.
2. What are the potential commercial applications of this technology? - This technology can be applied in various electronic devices and industrial settings where precise control over semiconductor layers is essential for optimal operation.
Original Abstract Submitted
a semiconductor device includes a plurality of semiconductor layers vertically separated from one another. each of the plurality of semiconductor layers extends along a first lateral direction. the semiconductor device includes a gate structure that extends along a second lateral direction and comprises at least a lower portion that wraps around each of the plurality of semiconductor layers. the lower portion of the gate structure comprises a plurality of first gate sections that are laterally aligned with the plurality of semiconductor layers, respectively, and wherein each of the plurality of first gate sections has ends that each extend along the second lateral direction and present a first curvature-based profile.
