Taiwan semiconductor manufacturing company, ltd. (20240213340). SOURCE/DRAIN STRUCTURE FOR SEMICONDUCTOR DEVICE simplified abstract

SOURCE/DRAIN STRUCTURE FOR SEMICONDUCTOR DEVICE

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Shahaji B. More of Hsinchu (TW)

Cheng-Han Lee of New Taipei City (TW)

SOURCE/DRAIN STRUCTURE FOR SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240213340 titled 'SOURCE/DRAIN STRUCTURE FOR SEMICONDUCTOR DEVICE

The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure includes a substrate, a gate structure over the substrate, and a source/drain (S/D) region adjacent to the gate structure. The S/D region has first and second side surfaces separated from each other, as well as top and bottom surfaces between the first and second side surfaces. The first separation between the top and bottom surfaces is greater than the second separation between the first and second side surfaces.

• The semiconductor structure includes a unique S/D region design with specific surface separations.
• The method for forming the semiconductor structure involves precise fabrication techniques.
• The gate structure and S/D region are essential components of the semiconductor structure.
• The design of the S/D region contributes to the overall performance of the semiconductor device.
• The specific surface separations in the S/D region enhance the functionality of the semiconductor structure.

Potential Applications: This technology can be applied in the manufacturing of advanced semiconductor devices, such as transistors and integrated circuits.

Problems Solved: This innovation addresses the need for improved semiconductor structures with optimized S/D regions.

Benefits: Enhanced performance and efficiency of semiconductor devices. Improved functionality and reliability of integrated circuits.

Commercial Applications: This technology has commercial applications in the semiconductor industry for the production of high-performance electronic devices.

Questions about the Semiconductor Structure: 1. How does the unique design of the S/D region impact the overall performance of the semiconductor structure? 2. What are the specific fabrication techniques involved in forming the semiconductor structure?

Frequently Updated Research: Researchers are continually exploring new methods to enhance the design and performance of semiconductor structures, including S/D regions.

Original Abstract Submitted

the present disclosure describes a semiconductor structure and a method for forming the same. the semiconductor structure can include a substrate, a gate structure over the substrate, and a source/drain (s/d) region adjacent to the gate structure. the s/d region can include first and second side surfaces separated from each other. the s/d region can further include top and bottom surfaces between the first and second side surfaces. a first separation between the top and bottom surfaces can be greater than a second separation between the first and second side surfaces.