Taiwan semiconductor manufacturing company, ltd. (20240213316). SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Yi-Ruei Jhan of Keelung (TW)

Pei-Yu Wang of Hsinchu (TW)

Cheng-Ting Chung of Hsinchu (TW)

Kuan-Ting Pan of Taipei (TW)

Shi Ning Ju of Hsinchu (TW)

Kuo-Cheng Chiang of Hsinchu (TW)

Chih-Hao Wang of Hsinchu (TW)

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240213316 titled 'SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

The method described in the abstract involves growing a conformal semiconductor layer from two stacks of semiconductor layers, filling the space between them with a dielectric fin, and forming a metal gate structure over the layers.

• Epitaxially growing a conformal semiconductor layer from two stacks of semiconductor layers
• Filling the space between the stacks with a dielectric fin
• Removing the conformal semiconductor layer and second semiconductor layers
• Forming a metal gate structure over the first semiconductor layers
• Performing a process to create isolation between portions of the metal gate structure

Potential Applications: - Semiconductor device manufacturing - Nanotechnology research - Advanced electronic devices

Problems Solved: - Improving the performance and efficiency of nanosheet devices - Enhancing the functionality of semiconductor devices

Benefits: - Increased speed and performance of electronic devices - More efficient use of space in semiconductor devices

Commercial Applications: Title: Advanced Nanosheet Device Manufacturing Technology This technology could be used in the production of high-performance electronic devices, leading to advancements in various industries such as telecommunications, computing, and consumer electronics.

Prior Art: Prior research in the field of semiconductor device manufacturing and nanotechnology may provide insights into similar methods and technologies.

Frequently Updated Research: Researchers are constantly exploring new materials and techniques to further enhance the performance of nanosheet devices and semiconductor technologies.

Questions about Nanosheet Device Manufacturing: 1. How does this method compare to traditional semiconductor manufacturing processes? This method offers a more efficient way to create nanosheet devices with improved performance and functionality. 2. What are the potential challenges in scaling up this technology for mass production? Scaling up this technology may require optimization of manufacturing processes and materials to ensure consistent quality and performance.

Original Abstract Submitted

a method for forming a nanosheet device is provided. the method includes epitaxially growing a conformal semiconductor layer from a first stack of semiconductor layers and a second stack of the semiconductor layers. each of the first and second stack of semiconductor layers includes a plurality of first semiconductor layers and a plurality of second semiconductor layers alternately stacked on each other. a space between the first and second stacks of semiconductor layers is filled with a dielectric fin. the conformal semiconductor layer and the second semiconductor layers may be removed. a metal gate structure is formed over the first semiconductor layers and filling openings created by removal of the conformal semiconductor layer and the second semiconductor layer. a process may be performed on the metal gate structure to form an isolation between the portions of the metal gate structure being separated by a patterning process.