Taiwan semiconductor manufacturing company, ltd. (20240213313). SEMICONDUCTOR DEVICE simplified abstract

SEMICONDUCTOR DEVICE

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Kuo-Cheng Ching of Hsinchu County (TW)

Ching-Wei Tsai of Hsinchu City (TW)

Kuan-Lun Cheng of Hsinchu City (TW)

Chih-Hao Wang of Hsinchu County (TW)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240213313 titled 'SEMICONDUCTOR DEVICE

The semiconductor device described in the abstract consists of a semiconductor fin, a gate structure, and a dielectric isolation plug. The semiconductor fin is made up of a silicon germanium layer and a silicon layer, extending above a substrate along a first direction. The gate structure crosses the semiconductor fin in a direction perpendicular to the first direction. The dielectric isolation plug extends from the top surface of the silicon layer into the silicon germanium layer.

• The semiconductor device features a unique structure with a semiconductor fin comprising silicon germanium and silicon layers.
• The gate structure is positioned perpendicular to the semiconductor fin, enhancing the device's functionality.
• The dielectric isolation plug provides effective isolation between components within the device.
• The integration of different materials in the semiconductor fin allows for improved performance and efficiency.
• The device design optimizes space and enhances overall functionality.

Potential Applications: This technology can be applied in the development of advanced semiconductor devices for various electronic applications, such as integrated circuits and microprocessors.

Problems Solved: The technology addresses the need for improved isolation and performance in semiconductor devices, offering a more efficient and reliable solution.

Benefits: The semiconductor device offers enhanced performance, efficiency, and space optimization, making it ideal for high-tech electronic applications.

Commercial Applications: This technology has significant commercial potential in the semiconductor industry, particularly in the development of cutting-edge electronic devices for consumer electronics, telecommunications, and computing.

Questions about the technology: 1. How does the integration of silicon germanium and silicon layers in the semiconductor fin impact the device's performance? 2. What are the specific advantages of the dielectric isolation plug in the semiconductor device design?

Original Abstract Submitted

a semiconductor device includes a semiconductor fin, a gate structure, and a dielectric isolation plug. the semiconductor fin extends along a first direction above a substrate and includes a silicon germanium layer and a silicon layer over the silicon germanium layer. the gate structure extends across the semiconductor fin along a second direction perpendicular to the first direction. the dielectric isolation plug extends downwardly from a top surface of the silicon layer into the silicon germanium layer when viewed in a cross section taken along the first direction.