Taiwan semiconductor manufacturing company, ltd. (20240213305). METAL-INSULATOR-METAL STRUCTURE AND METHODS OF FABRICATION THEREOF simplified abstract

METAL-INSULATOR-METAL STRUCTURE AND METHODS OF FABRICATION THEREOF

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Chih-Fan Huang of Kaohsiung City (TW)

Hung-Chao Kao of Taipei City (TW)

Yuan-Yang Hsiao of Taipei (TW)

Tsung-Chieh Hsiao of Changhua County (TW)

Hsiang-Ku Shen of Hsinchu City (TW)

Hui-Chi Chen of Hsinchu County (TW)

Dian-Hau Chen of Hsinchu (TW)

Yen-Ming Chen of Hsin-Chu County (TW)

METAL-INSULATOR-METAL STRUCTURE AND METHODS OF FABRICATION THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240213305 titled 'METAL-INSULATOR-METAL STRUCTURE AND METHODS OF FABRICATION THEREOF

The present disclosure pertains to a semiconductor device with a multi-layer interconnect structure, a dielectric layer, and a metal-insulator-metal (MIM) capacitor.

• The semiconductor device includes a multi-layer interconnect structure over a substrate.
• A dielectric layer is placed over the multi-layer interconnect structure.
• A MIM capacitor is positioned over the dielectric layer.
• The MIM capacitor consists of a bottom electrode on the dielectric layer, a top electrode above the bottom electrode, and an insulating layer between them.
• The bottom electrode has a slanted sidewall, while the top electrode has a vertical sidewall.
• The insulating layer covers the slanted sidewall of the bottom electrode.

Potential Applications: - This technology can be used in integrated circuits for various electronic devices. - It can enhance the performance and efficiency of semiconductor devices.

Problems Solved: - Improved capacitance and electrical performance in semiconductor devices. - Enhanced reliability and stability of the MIM capacitor structure.

Benefits: - Higher capacitance density. - Better signal transmission and reduced signal loss. - Increased overall performance and reliability of semiconductor devices.

Commercial Applications: - This technology can be applied in the manufacturing of advanced electronic devices such as smartphones, tablets, and computers. - It can also be utilized in the automotive industry for vehicle electronics.

Questions about the Technology: 1. How does the slanted sidewall of the bottom electrode contribute to the performance of the MIM capacitor? 2. What are the specific advantages of having a vertical sidewall for the top electrode in this semiconductor device?

Frequently Updated Research: - Stay updated on advancements in semiconductor technology and materials science to enhance the performance of MIM capacitors in semiconductor devices.

Original Abstract Submitted

the present disclosure is directed to a semiconductor device. the semiconductor device includes a multi-layer interconnect structure disposed over a substrate, a dielectric layer disposed over the multi-layer interconnect structure, and a metal-insulator-metal (mim) capacitor disposed over the dielectric layer. the mim capacitor includes a bottom electrode disposed on a top surface of the dielectric layer, a top electrode disposed above the bottom electrode, and an insulating layer interposed between the bottom electrode and the top electrode. the bottom electrode has a slanted sidewall with respect to the top surface of the dielectric layer. the top electrode has a vertical sidewall with respect to the top surface of the dielectric layer. the insulating layer covers the slanted sidewall of the bottom electrode.