Taiwan semiconductor manufacturing company, ltd. (20240213246). SEMICONDUCTOR DEVICE, INTEGRATED CIRCUIT AND METHODS OF MANUFACTURING THE SAME simplified abstract

SEMICONDUCTOR DEVICE, INTEGRATED CIRCUIT AND METHODS OF MANUFACTURING THE SAME

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Yi-Tse Hung of Hsinchu (TW)

Ang-Sheng Chou of Hsinchu (TW)

Hung-Li Chiang of Taipei City (TW)

Tzu-Chiang Chen of Hsinchu City (TW)

Chao-Ching Cheng of Hsinchu City (TW)

SEMICONDUCTOR DEVICE, INTEGRATED CIRCUIT AND METHODS OF MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240213246 titled 'SEMICONDUCTOR DEVICE, INTEGRATED CIRCUIT AND METHODS OF MANUFACTURING THE SAME

Simplified Explanation:

This patent application describes a semiconductor device with a unique structure involving a gate layer, a channel material layer, a dielectric layer, and source/drain terminals. The device is designed to improve performance and efficiency in electronic applications.

• The device includes a gate layer positioned on a substrate.
• A channel material layer, containing a low-dimensional material, is placed above the gate layer.
• A dielectric layer separates the gate layer from the channel material layer.
• Source/drain terminals are in contact with the channel material layer, with the gate layer positioned between the substrate and the terminals.

Key Features and Innovation:

• Incorporation of a low-dimensional material in the channel material layer for enhanced performance.
• Strategic placement of the source/drain terminals for efficient electron flow.
• Dielectric layer for insulation and protection of the components.
• Overall design aimed at improving semiconductor device efficiency and functionality.

Potential Applications:

This technology can be applied in:

• Integrated circuits
• Microprocessors
• Memory devices
• Power electronics

Problems Solved:

• Enhancing performance and efficiency of semiconductor devices.
• Improving electron flow and conductivity.
• Providing insulation and protection for sensitive components.

Benefits:

• Increased device performance.
• Enhanced efficiency in electronic applications.
• Improved reliability and longevity of semiconductor devices.

Commercial Applications:

Potential commercial uses include:

• Consumer electronics
• Automotive electronics
• Telecommunications equipment
• Industrial machinery

Questions about Semiconductor Devices:

1. What are the key components of a semiconductor device?

  - A semiconductor device typically includes a substrate, gate layer, channel material layer, dielectric layer, and source/drain terminals.

2. How does the incorporation of low-dimensional materials impact semiconductor device performance?

  - Low-dimensional materials can enhance conductivity and electron flow in semiconductor devices, leading to improved efficiency and functionality.

Original Abstract Submitted

a semiconductor device includes a gate layer, a channel material layer, a first dielectric layer and source/drain terminals. the gate layer is disposed over a substrate. the channel material layer is disposed over the gate layer, where a material of the channel material layer includes a first low dimensional material. the first dielectric layer is between the gate layer and the channel material layer. the source/drain terminals are in contact with the channel material layer, where the channel material layer is at least partially disposed between the source/drain terminals and over the gate layer, and the gate layer is disposed between the substrate and the source/drain terminals.