Taiwan semiconductor manufacturing company, ltd. (20240213236). INTEGRATED CIRCUIT PACKAGE AND METHOD simplified abstract
Contents
INTEGRATED CIRCUIT PACKAGE AND METHOD
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Kuo-Chiang Ting of Hsinchu (TW)
Sung-Feng Yeh of Taipei City (TW)
INTEGRATED CIRCUIT PACKAGE AND METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240213236 titled 'INTEGRATED CIRCUIT PACKAGE AND METHOD
The semiconductor device described in the abstract consists of a first semiconductor package with a first interconnect structure on a first semiconductor substrate, through substrate vias electrically coupled to the first interconnect structure, and a second semiconductor package directly bonded to the first semiconductor package. The second semiconductor package includes a second semiconductor substrate and a second interconnect structure.
- Simplified Explanation:
- The semiconductor device has two semiconductor packages bonded together. - The first package has an interconnect structure and through substrate vias. - The second package has its interconnect structure and a silicon layer for heat dissipation.
- Key Features and Innovation:
- Integration of two semiconductor packages for enhanced performance. - Through substrate vias for efficient electrical coupling. - Silicon layer for improved heat dissipation.
- Potential Applications:
- High-performance computing. - Telecommunications equipment. - Automotive electronics.
- Problems Solved:
- Improved thermal management. - Enhanced electrical connectivity. - Space-saving design.
- Benefits:
- Increased reliability. - Better performance. - Compact form factor.
- Commercial Applications:
- Data centers. - Mobile devices. - Automotive systems.
- Questions about Semiconductor Device:
1. How does the through substrate vias technology improve electrical coupling? 2. What are the advantages of directly bonding semiconductor packages?
- Frequently Updated Research:
- Ongoing studies on advanced thermal management techniques in semiconductor devices. - Research on optimizing through substrate vias for high-speed data transfer.
Original Abstract Submitted
a semiconductor device includes a first semiconductor package comprising: a first interconnect structure on a first semiconductor substrate; through substrate vias electrically coupled to the first interconnect structure extending through the first semiconductor substrate; and a second semiconductor package directly bonded to the first semiconductor package, the second semiconductor package comprising a second semiconductor substrate and a second interconnect structure on the second semiconductor substrate. the semiconductor device further includes a silicon layer on a surface of the second semiconductor package that is opposite to the first semiconductor package; and a heat dissipation structure attached to the silicon layer.
