Taiwan semiconductor manufacturing company, ltd. (20240213161). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Chia-Cheng Chou of Keelung City (TW)
Ming-Tsung Lee of Hsinchu (TW)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240213161 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract includes a substrate, a low-k dielectric layer, a cap layer, and a conductive layer. The low-k dielectric layer is positioned over the substrate, with the cap layer on top of it. The carbon atom content of the cap layer is higher than that of the low-k dielectric layer. The conductive layer is located within both the cap layer and the low-k dielectric layer.
- The semiconductor device features a unique cap layer with a higher carbon atom content than the low-k dielectric layer.
- The conductive layer is strategically placed within the cap layer and the low-k dielectric layer for optimal performance.
- This innovation aims to enhance the overall efficiency and functionality of semiconductor devices.
- By utilizing different carbon atom contents in the layers, the device can achieve improved electrical properties.
- The design of this semiconductor device offers potential advancements in the field of electronic components.
Potential Applications: - Integrated circuits - Microprocessors - Memory devices
Problems Solved: - Enhancing the performance of semiconductor devices - Improving electrical properties - Increasing efficiency in electronic components
Benefits: - Enhanced functionality - Improved electrical performance - Potential for advancements in semiconductor technology
Commercial Applications: Title: Advanced Semiconductor Devices with Enhanced Carbon Atom Content This technology could be utilized in the development of high-performance electronic devices, leading to improved consumer electronics, faster computing systems, and more efficient communication devices.
Questions about the technology: 1. How does the carbon atom content in the cap layer affect the overall performance of the semiconductor device? 2. What potential challenges could arise from integrating layers with different carbon atom contents in semiconductor devices?
Original Abstract Submitted
a semiconductor device including a substrate, a low-k dielectric layer, a cap layer, and a conductive layer is provided. the low-k dielectric layer is disposed over the substrate. the cap layer is disposed on the low-k dielectric layer, wherein a carbon atom content of the cap layer is greater than a carbon atom content of the low-k dielectric layer. the conductive layer is disposed in the cap layer and the low-k dielectric layer.
