Taiwan semiconductor manufacturing company, ltd. (20240213157). GRAPHENE BARRIER LAYER simplified abstract
Contents
GRAPHENE BARRIER LAYER
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Shin-Yi Yang of New Taipei City (TW)
Ming-Han Lee of Taipei City (TW)
GRAPHENE BARRIER LAYER - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240213157 titled 'GRAPHENE BARRIER LAYER
The abstract of this patent application describes interconnect structures with a graphene layer, providing improved performance and reliability in electronic devices.
- Simplified Explanation:
This patent application discusses interconnect structures with a graphene layer for enhanced electronic device performance.
- Key Features and Innovation:
- First contact feature in a dielectric layer - Second contact feature extending through multiple dielectric layers - Graphene layer between the second contact feature and dielectric layer
- Potential Applications:
- Semiconductor industry - Electronics manufacturing - Integrated circuits
- Problems Solved:
- Improved conductivity - Enhanced device reliability - Reduced signal loss
- Benefits:
- Increased device efficiency - Better signal transmission - Longer device lifespan
- Commercial Applications:
Graphene-based interconnect structures can be utilized in various electronic devices, leading to faster and more reliable performance in the semiconductor industry.
- Prior Art:
Readers can explore prior research on graphene-based interconnect structures in the semiconductor and electronics fields to understand the evolution of this technology.
- Frequently Updated Research:
Stay informed about the latest advancements in graphene-based interconnect structures by following research publications in the semiconductor and electronics industries.
Questions about Graphene-Based Interconnect Structures: 1. How does the graphene layer improve the performance of electronic devices? - The graphene layer enhances conductivity and reduces signal loss in interconnect structures, leading to improved device efficiency.
2. What are the potential challenges in implementing graphene-based interconnect structures in commercial electronic devices? - Challenges may include scalability, cost-effectiveness, and integration with existing manufacturing processes.
Original Abstract Submitted
interconnect structures and method of forming the same are disclosed herein. an exemplary interconnect structure includes a first contact feature in a first dielectric layer, a second dielectric layer over the first dielectric layer, a third dielectric layer over the second dielectric layer, a second contact feature extending through the second dielectric layer and the third dielectric layer, and a graphene layer between the second contact feature and the third dielectric layer.
