Taiwan semiconductor manufacturing company, ltd. (20240213097). SEMICONDUCTOR DEVICE HAVING CUT GATE DIELECTRIC simplified abstract

SEMICONDUCTOR DEVICE HAVING CUT GATE DIELECTRIC

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Chang-Yun Chang of Taipei City (TW)

Bone-Fong Wu of Hsinchu City (TW)

Ming-Chang Wen of Kaohsiung City (TW)

Ya-Hsiu Lin of Taoyuan City (TW)

SEMICONDUCTOR DEVICE HAVING CUT GATE DIELECTRIC - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240213097 titled 'SEMICONDUCTOR DEVICE HAVING CUT GATE DIELECTRIC

The patent application describes a device with a semiconductor fin, gate structure, gate spacers, and a dielectric feature.

• The semiconductor fin is located over a substrate.
• The gate structure is positioned over the semiconductor fin and consists of a gate dielectric layer and a gate metal.
• Gate spacers are present on either side of the gate structure.
• The dielectric feature is situated over the substrate and is in contact with the gate metal, gate dielectric layer, and gate spacers.
• The interface between the gate metal and the dielectric feature aligns with the interface between the dielectric feature and one of the gate spacers.

Key Features and Innovation:

• Integration of gate structure components with a dielectric feature for improved performance.
• Alignment of interfaces to enhance functionality and efficiency.

Potential Applications:

• Advanced semiconductor devices.
• High-performance electronics.
• Integrated circuits.

Problems Solved:

• Enhanced device performance.
• Improved interface alignment.
• Increased efficiency.

Benefits:

• Higher device functionality.
• Improved overall performance.
• Enhanced reliability.

Commercial Applications:

• Semiconductor industry for manufacturing high-performance devices.
• Electronics sector for advanced integrated circuits.

Prior Art: Prior research may include studies on gate structures and dielectric features in semiconductor devices.

Frequently Updated Research: Stay updated on advancements in semiconductor technology and device integration.

Questions about the Technology: 1. How does the alignment of interfaces impact the device's performance? 2. What are the potential challenges in integrating the gate structure with the dielectric feature?

Original Abstract Submitted

a device includes a semiconductor fin, a gate structure, gate spacers, and a dielectric feature. the semiconductor fin is over a substrate. the gate structure is over the semiconductor fin and includes a gate dielectric layer over the semiconductor fin and a gate metal covering the gate dielectric layer. the gate spacers are on opposite sides of the gate structure. the dielectric feature is over the substrate. the dielectric feature is in contact with the gate metal, the gate dielectric layer, and the gate spacers, and an interface between the gate metal and the dielectric feature is substantially aligned with an interface between the dielectric feature and one of the gate spacers.