Taiwan semiconductor manufacturing company, ltd. (20240212762). SEMICONDUCTOR MEMORY DEVICES WITH DIELECTRIC FIN STRUCTURES simplified abstract
Contents
- 1 SEMICONDUCTOR MEMORY DEVICES WITH DIELECTRIC FIN STRUCTURES
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR MEMORY DEVICES WITH DIELECTRIC FIN STRUCTURES - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Commercial Applications
- 1.9 Prior Art
- 1.10 Frequently Updated Research
- 1.11 Questions about Memory Systems
- 1.12 Original Abstract Submitted
SEMICONDUCTOR MEMORY DEVICES WITH DIELECTRIC FIN STRUCTURES
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Meng-Sheng Chang of Chubei City (TW)
Chia-En Huang of Xinfeng Township (TW)
SEMICONDUCTOR MEMORY DEVICES WITH DIELECTRIC FIN STRUCTURES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240212762 titled 'SEMICONDUCTOR MEMORY DEVICES WITH DIELECTRIC FIN STRUCTURES
Simplified Explanation
The memory system described in the patent application consists of a memory array with multiple memory cells, each containing specific transistors. An authentication circuit is connected to the memory array to generate a unique signature based on the logic states of the memory cells, which are determined by the breakdown of certain transistors.
- The memory system includes a memory array with multiple memory cells, each containing specific transistors.
- An authentication circuit is connected to the memory array to generate a unique signature based on the logic states of the memory cells.
- The logic states of the memory cells are determined by the breakdown of specific transistors in each cell.
Potential Applications
This technology could be used in secure data storage systems, anti-counterfeiting measures, and authentication processes for electronic devices.
Problems Solved
This technology addresses the need for secure and unique identification methods in memory systems, enhancing data protection and preventing unauthorized access.
Benefits
The technology provides a robust and reliable way to generate unique signatures for authentication purposes, improving security measures in memory systems.
Commercial Applications
Potential commercial applications include secure data storage solutions for sensitive information, anti-counterfeiting measures for products, and enhanced authentication processes for electronic devices.
Prior Art
Prior art related to this technology may include research on physically unclonable functions (PUFs) and memory authentication methods.
Frequently Updated Research
Researchers may be exploring advancements in memory authentication technology, improvements in PUF signatures, and applications of unique memory cell logic states in security measures.
Questions about Memory Systems
How does the breakdown of specific transistors in memory cells contribute to generating a unique signature?
The breakdown of specific transistors in memory cells affects the logic states of the cells, which are used to create a unique signature through the authentication circuit.
What are the potential implications of using physically unclonable functions (PUFs) in memory systems for security purposes?
Physically unclonable functions (PUFs) provide a secure and unique way to authenticate memory systems, enhancing data protection and preventing unauthorized access.
Original Abstract Submitted
a memory system includes a memory array comprising a plurality of memory cells. each of the memory cells includes a first programming transistor, a second programming transistor, a first reading transistor coupled to the first programming transistor in series, and a second reading transistor coupled to the second programming transistor in series. the memory system includes an authentication circuit operatively coupled to the memory array. the authentication circuit is configured to generate a physically unclonable function (puf) signature based on respective logic states of the plurality of memory cells. the logic state of each of the plurality of memory cells is determined based on a preceding breakdown of either the corresponding first programming transistor or second programming transistor.
