Taiwan semiconductor manufacturing company, ltd. (20240212727). MEMORY DEVICE simplified abstract
Contents
MEMORY DEVICE
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Meng-Sheng Chang of Hsinchu County (TW)
Chia-En Huang of Hsinchu County (TW)
Yi-Ching Liu of Hsinchu City (TW)
MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240212727 titled 'MEMORY DEVICE
The memory device described in the patent application consists of multiple arrays connected in parallel. One of the arrays includes switches and memory cells arranged in columns, with data lines connecting the memory cells to sense amplifiers.
- The memory device features multiple arrays operating in parallel.
- Each array includes switches and memory cells organized in columns.
- Data lines link the memory cells to sense amplifiers for data output.
Potential Applications: This technology could be used in various electronic devices requiring high-speed and efficient memory storage, such as computers, smartphones, and servers.
Problems Solved: The memory device addresses the need for fast and reliable data storage and retrieval in modern electronic devices.
Benefits: The memory device offers improved performance, speed, and efficiency in data storage operations, enhancing the overall functionality of electronic devices.
Commercial Applications: This technology has significant commercial potential in the semiconductor industry, particularly in the development of advanced memory solutions for consumer electronics and data centers.
Questions about the memory device: 1. How does the parallel array configuration improve memory device performance?
- The parallel array setup allows for simultaneous data processing, enhancing speed and efficiency.
2. What are the key advantages of using switches and memory cells in columns?
- Organizing switches and memory cells in columns enables efficient data access and retrieval.
Original Abstract Submitted
a memory device includes a plurality of arrays coupled in parallel with each other. a first array of the plurality of arrays includes a first switch and a plurality of first memory cells that are arranged in a first column, a second switch and a plurality of second memory cells that are arranged in a second column, and at least one data line coupled to the plurality of first memory cells and the plurality of second memory cells. the second switch is configured to output a data signal from the at least one data line to a sense amplifier.
