Taiwan semiconductor manufacturing company, ltd. (20240206344). INTEGRATED CIRCUIT DEVICE simplified abstract

INTEGRATED CIRCUIT DEVICE

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Tai-Yen Peng of Hsinchu City (TW)

Hui-Hsien Wei of Taoyuan City (TW)

Wei-Chih Wen of Hsinchu County (TW)

Pin-Ren Dai of Hsinchu County (TW)

Chien-Min Lee of Hsinchu County (TW)

Sheng-Chih Lai of Hsinchu County (TW)

Han-Ting Tsai of Kaohsiung City (TW)

Chung-Te Lin of Tainan City (TW)

INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240206344 titled 'INTEGRATED CIRCUIT DEVICE

The memory device described in the abstract consists of multiple layers including a bottom electrode contact, a magnetic tunnel junction pattern, a protection insulating layer, a first capping layer, an interlayer insulating layer, and a second capping layer. The layers are arranged in a specific order with the magnetic tunnel junction pattern positioned over the bottom electrode contact, and the various insulating layers surrounding and protecting the junction pattern.

• The memory device includes a bottom electrode contact for electrical connection.
• A magnetic tunnel junction pattern is positioned over the bottom electrode contact.
• A protection insulating layer surrounds the magnetic tunnel junction pattern for protection.
• A first capping layer encloses the protection insulating layer.
• An interlayer insulating layer surrounds the first capping layer.
• A second capping layer is placed over the first capping layer and the interlayer insulating layer.

Potential Applications: - This memory device can be used in various electronic devices such as computers, smartphones, and tablets. - It can also be utilized in data storage systems and servers.

Problems Solved: - The memory device provides a reliable and efficient way to store and retrieve data. - The specific layering structure helps protect the magnetic tunnel junction pattern from external factors.

Benefits: - Improved data storage capabilities. - Enhanced durability and longevity of the memory device. - Efficient performance in electronic devices.

Commercial Applications: Title: Advanced Memory Devices for Enhanced Data Storage This technology can be commercialized for use in consumer electronics, data centers, and other storage solutions. The efficient design and protective layers make it a valuable component in the digital storage industry.

Questions about Memory Devices: 1. How does the layering structure of the memory device contribute to its performance and durability? 2. What are the potential challenges in implementing this memory device in different electronic devices?

Original Abstract Submitted

a memory device includes a bottom electrode contact, a magnetic tunnel junction pattern, a protection insulating layer, a first capping layer, an interlayer insulating layer, and a second capping layer. the magnetic tunnel junction pattern is over the bottom electrode contact. the protection insulating layer surrounds the magnetic tunnel junction pattern. the first capping layer surrounds the protection insulating layer. the interlayer insulating layer surrounds the first capping layer. the second capping layer is over the first capping layer and the interlayer insulating layer.