Taiwan semiconductor manufacturing company, ltd. (20240206185). FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME simplified abstract
Contents
FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Chun-Chieh Lu of Taipei City (TW)
Sai-Hooi Yeong of Zhubei City (TW)
Yu-Ming Lin of Hsinchu City (TW)
Chih-Yu Chang of New Taipei City (TW)
FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240206185 titled 'FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME
The present disclosure pertains to an integrated chip device with multiple conductive lines stacked over a substrate, separated by dielectric layers. A ferroelectric layer lines the sidewalls of the conductive lines and dielectric layers, separating a channel layer. A species within the ferroelectric layer decreases in concentration from the channel layer towards the outer surface.
- Conductive lines stacked over a substrate
- Separated by dielectric layers
- Ferroelectric layer along sidewalls
- Species with decreasing concentration towards the surface
- Channel layer separated by ferroelectric layer
Potential Applications: - Advanced semiconductor devices - Memory storage technology - High-speed computing systems
Problems Solved: - Enhanced performance and efficiency in integrated chip devices - Improved data storage and processing capabilities - Increased reliability and durability of semiconductor components
Benefits: - Higher data transfer speeds - Lower power consumption - Improved overall system performance
Commercial Applications: Title: Advanced Semiconductor Devices for Next-Generation Computing Systems This technology can be utilized in: - Consumer electronics - Data centers - Telecommunications industry
Questions about Integrated Chip Device Technology: 1. How does the ferroelectric layer impact the performance of the integrated chip device? The ferroelectric layer enhances the efficiency and reliability of the device by separating the channel layer from the conductive lines. 2. What are the potential long-term implications of integrating species with decreasing concentration in the ferroelectric layer? The integration of species with decreasing concentration can lead to improved data storage capabilities and overall system performance.
Original Abstract Submitted
the present disclosure relates to an integrated chip device. the integrated chip device includes a plurality of conductive lines disposed over a substrate. the plurality of conductive lines are stacked onto one another and are separated from one another by dielectric layers interleaved between adjacent ones of the plurality of conductive lines. a ferroelectric layer is along sidewalls of the plurality of conductive lines and the dielectric layers. the ferroelectric layer separates a channel layer from the plurality of conductive lines. a species is disposed within the ferroelectric layer. the species has a concentration that decreases from the channel layer towards a surface of the ferroelectric layer that faces away from the channel layer.
