Taiwan semiconductor manufacturing company, ltd. (20240204105). SEMICONDUCTOR DEVICE simplified abstract

SEMICONDUCTOR DEVICE

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Chang-Yin Chen of Taipei City (TW)

Che-Cheng Chang of New Taipei City (TW)

Chih-Han Lin of Hsinchu City (TW)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240204105 titled 'SEMICONDUCTOR DEVICE

The semiconductor device described in the abstract includes a unique structure with an isolation insulating layer, a semiconductor fin, a gate structure, gate sidewall spacers, and a source/drain epitaxial layer.

• The semiconductor fin has an upper portion protruding from the isolation insulating layer and a lower portion embedded in it.
• The gate structure consists of a gate dielectric layer and a gate electrode layer.
• A first epitaxial growth enhancement layer, made of a different semiconductor material, is present in the upper portion of the semiconductor fin, in contact with the source/drain epitaxial layer.
• The gate dielectric layer covers the upper portion of the semiconductor fin, including the first epitaxial growth enhancement layer.

Potential Applications: - This technology can be applied in the manufacturing of advanced semiconductor devices for various electronic applications.

Problems Solved: - Provides improved performance and efficiency in semiconductor devices. - Enhances the integration of different semiconductor materials in a single device.

Benefits: - Increased functionality and performance of semiconductor devices. - Enables the development of more compact and efficient electronic devices.

Commercial Applications: - This technology can be utilized in the production of high-performance integrated circuits for consumer electronics, telecommunications, and computing devices.

Questions about the technology: 1. How does the first epitaxial growth enhancement layer improve the performance of the semiconductor device? 2. What are the potential challenges in scaling up the production of semiconductor devices using this technology?

Frequently Updated Research: - Stay updated on the latest advancements in semiconductor device manufacturing techniques and materials to enhance the efficiency and performance of electronic devices.

Original Abstract Submitted

a semiconductor device includes an isolation insulating layer disposed over a substrate, a semiconductor fin disposed over the substrate, an upper portion of the semiconductor fin protruding from the isolation insulating layer and a lower portion of the semiconductor fin being embedded in the isolation insulating layer, a gate structure disposed over the upper portion of the semiconductor fin and including a gate dielectric layer and a gate electrode layer, gate sidewall spacers disposed over opposing side faces of the gate structure, and a source/drain epitaxial layer. the upper portion of the semiconductor fin includes a first epitaxial growth enhancement layer made of a semiconductor material different from a remaining part of the semiconductor fin. the first epitaxial growth enhancement layer is in contact with the source/drain epitaxial layer. the gate dielectric layer covers the upper portion of the semiconductor fin including the first epitaxial growth enhancement layer.