Taiwan semiconductor manufacturing company, ltd. (20240204084). SEMICONDUCTOR DEVICE simplified abstract

SEMICONDUCTOR DEVICE

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Yen-Ru Lee of Hsinchu City (TW)

Chii-Horng Li of Hsinchu County (TW)

Chien-I Kuo of Hsinchu County (TW)

Heng-Wen Ting of Pingtung County (TW)

Jung-Chi Tai of Taipei (TW)

Lilly Su of Hsinchu County (TW)

Yang-Tai Hsiao of Hsinchu City (TW)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240204084 titled 'SEMICONDUCTOR DEVICE

The device described in the abstract includes a first semiconductor fin, a second semiconductor fin, a source/drain epitaxial structure, a semiconductive cap, and a contact. The first and second semiconductor fins are positioned over a substrate, with the source/drain epitaxial structure connected to them. The source/drain epitaxial structure features protruding portions aligned with the semiconductor fins, and the semiconductive cap sits on top of these protruding portions. The contact is electrically connected to the source/drain epitaxial structure and covers the semiconductive cap.

• The device incorporates a unique source/drain epitaxial structure with protruding portions aligned with the semiconductor fins.
• The semiconductive cap is positioned on top of the protruding portions, providing electrical insulation and protection.
• The contact is connected to the source/drain epitaxial structure and covers the semiconductive cap, ensuring proper electrical connectivity.

Potential Applications: - This technology could be utilized in the development of advanced semiconductor devices for various electronic applications. - It may find applications in the manufacturing of high-performance integrated circuits and microprocessors.

Problems Solved: - Provides improved electrical connectivity and protection for semiconductor devices. - Enhances the performance and reliability of electronic components.

Benefits: - Enhanced electrical insulation and protection for semiconductor fins. - Improved connectivity and reliability of electronic devices.

Commercial Applications: Title: Advanced Semiconductor Device with Enhanced Source/Drain Epitaxial Structure This technology could be commercialized in the semiconductor industry for the production of high-performance electronic devices, leading to advancements in consumer electronics, telecommunications, and computing.

Questions about the technology: 1. How does the unique source/drain epitaxial structure improve the performance of the semiconductor device? 2. What are the potential cost implications of implementing this technology in semiconductor manufacturing processes?

Frequently Updated Research: Stay updated on the latest advancements in semiconductor technology and manufacturing processes to leverage the full potential of this innovative device design.

Original Abstract Submitted

a device includes a first semiconductor fin, a second semiconductor fin, a source/drain epitaxial structure, a semiconductive cap, and a contact. the first semiconductor fin and the second semiconductor fin are over a substrate. the source/drain epitaxial structure is connected to the first semiconductor fin and the second semiconductor fin. the source/drain epitaxial structure includes a first protruding portion and a second protruding portion aligned with the first semiconductor fin and the second semiconductor fin, respectively. the semiconductive cap is on and in contact with the first protruding portion and the second protruding portion. a top surface of the semiconductive cap is lower than a top surface of the first protruding portion of the source/drain epitaxial structure. the contact is electrically connected to the source/drain epitaxial structure and covers the semiconductive cap.