Taiwan semiconductor manufacturing company, ltd. (20240204069). SEMICONDUCTOR DEVICES simplified abstract
Contents
SEMICONDUCTOR DEVICES
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Chun-Han Chen of Changhua City (TW)
Chen-Ming Lee of Yangmei City (TW)
Mei-Yun Wang of Chu-Pei City (TW)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240204069 titled 'SEMICONDUCTOR DEVICES
The abstract describes a device with a gate electrode, an epitaxial source/drain region, inter-layer dielectric (ILD) layers, a first source/drain contact, a contact spacer, and a void between the contact spacer and the ILD layers.
- The device includes a gate electrode and an epitaxial source/drain region adjacent to it.
- One or more ILD layers are present over the epitaxial source/drain region.
- A first source/drain contact extends through the ILD layers and is connected to the epitaxial source/drain region.
- A contact spacer surrounds the first source/drain contact.
- A void is located between the contact spacer and the ILD layers.
Potential Applications: - Semiconductor devices - Integrated circuits - Electronics manufacturing
Problems Solved: - Improved electrical contact between source/drain regions and contacts - Enhanced device performance and reliability - Reduction of parasitic capacitance
Benefits: - Higher device efficiency - Enhanced signal transmission - Improved overall device functionality
Commercial Applications: Title: Advanced Semiconductor Devices for Enhanced Performance This technology can be utilized in the production of high-performance electronic devices, leading to faster and more reliable consumer electronics, telecommunications equipment, and computing systems. The market implications include increased demand for advanced semiconductor components in various industries.
Prior Art: Readers can explore prior art related to semiconductor device fabrication processes, epitaxial growth techniques, and contact formation methods to gain a deeper understanding of the technological advancements in this field.
Frequently Updated Research: Researchers are constantly working on optimizing semiconductor device structures and materials to improve device performance and efficiency. Stay updated on the latest advancements in epitaxial growth technologies and contact formation processes to enhance your knowledge in this area.
Questions about Semiconductor Device Technology: 1. How does the epitaxial growth process impact the performance of semiconductor devices? Epitaxial growth plays a crucial role in determining the crystalline structure and electrical properties of the semiconductor material, directly influencing device performance.
2. What are the key challenges in achieving reliable electrical contacts in semiconductor devices? Ensuring low contact resistance, high reliability, and minimal parasitic effects are some of the main challenges faced in the fabrication of semiconductor devices.
Original Abstract Submitted
in an embodiment, a device includes: a gate electrode; a epitaxial source/drain region adjacent the gate electrode; one or more inter-layer dielectric (ild) layers over the epitaxial source/drain region; a first source/drain contact extending through the ild layers, the first source/drain contact connected to the epitaxial source/drain region; a contact spacer surrounding the first source/drain contact; and a void disposed between the contact spacer and the ild layers.
