Taiwan semiconductor manufacturing company, ltd. (20240204045). SEMICONDUCTOR DEVICES WITH BACKSIDE POWER RAIL AND METHOD THEREOF simplified abstract
Contents
SEMICONDUCTOR DEVICES WITH BACKSIDE POWER RAIL AND METHOD THEREOF
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Huan-Chieh Su of Changhua County (TW)
Cheng-Chi Chuang of New Taipei City (TW)
Chih-Hao Wang of Hsinchu County (TW)
SEMICONDUCTOR DEVICES WITH BACKSIDE POWER RAIL AND METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240204045 titled 'SEMICONDUCTOR DEVICES WITH BACKSIDE POWER RAIL AND METHOD THEREOF
The semiconductor structure described in the patent application includes channel layers, a gate structure, a first source/drain feature, a first dielectric cap, a first via, and a power rail.
- The structure consists of one or more channel layers.
- A gate structure is in contact with the channel layers.
- A first source/drain feature is connected to one side of the channel layers and is positioned next to the gate structure.
- A first dielectric cap is placed over the first source/drain feature, with its bottom surface below the top surface of the gate structure.
- A first via is located under the first source/drain feature and is electrically connected to it.
- A power rail is situated under the first via and is electrically connected to it.
Potential Applications: - This technology can be used in the development of advanced semiconductor devices. - It may find applications in the manufacturing of high-performance electronic components.
Problems Solved: - Enhances the performance and efficiency of semiconductor structures. - Provides improved electrical connectivity within the device.
Benefits: - Increased functionality and reliability of semiconductor devices. - Enhanced electrical performance and connectivity. - Potential for higher efficiency and speed in electronic applications.
Commercial Applications: Title: Advanced Semiconductor Structures for Enhanced Performance This technology could be utilized in the production of cutting-edge electronic devices, leading to improved performance and reliability in various commercial applications such as smartphones, computers, and other consumer electronics.
Questions about the technology: 1. How does the placement of the first dielectric cap contribute to the overall performance of the semiconductor structure? - The first dielectric cap helps in reducing parasitic capacitance and improving the overall electrical characteristics of the device. 2. What role does the power rail play in the functionality of the semiconductor structure? - The power rail provides a stable electrical connection and helps in efficient power distribution within the device.
Original Abstract Submitted
a semiconductor structure includes one or more channel layers; a gate structure engaging the one or more channel layers; a first source/drain feature connected to a first side of the one or more channel layers and adjacent to the gate structure; a first dielectric cap disposed over the first source/drain feature, wherein a bottom surface of the first dielectric cap is below a top surface of the gate structure; a first via disposed under and electrically connected to the first source/drain feature; and a power rail disposed under and electrically connected to the first via.
