Taiwan semiconductor manufacturing company, ltd. (20240204044). Confined Source/Drain Epitaxy Regions and Method Forming Same simplified abstract
Contents
Confined Source/Drain Epitaxy Regions and Method Forming Same
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Jeng-Wei Yu of New Taipei City (TW)
Tsung-Hsi Yang of Zhubei City (TW)
Confined Source/Drain Epitaxy Regions and Method Forming Same - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240204044 titled 'Confined Source/Drain Epitaxy Regions and Method Forming Same
The method described in the abstract involves the formation of isolations extending into a semiconductor substrate, followed by the recessing of the isolation regions to create semiconductor fins.
- Isolations are formed extending into a semiconductor substrate.
- Isolation regions are recessed to create semiconductor fins.
- First dielectric layer is formed on the isolation regions and the semiconductor fin.
- Second dielectric layer is formed over the first dielectric layer.
- Planarization of the second dielectric layer and the first dielectric layer is done.
- Recessing of the first dielectric layer is carried out.
- Protruding dielectric fin and protruding semiconductor fin are formed.
- Epitaxy semiconductor region is grown from a recess in the protruding semiconductor fin.
- Epitaxy semiconductor region expands laterally to contact a sidewall of the protruding dielectric fin.
Potential Applications: - Advanced semiconductor manufacturing processes - High-performance electronic devices - Nanotechnology research and development
Problems Solved: - Enhanced performance and efficiency of semiconductor devices - Improved integration of components in electronic devices
Benefits: - Increased speed and functionality of electronic devices - Higher precision and reliability in semiconductor manufacturing
Commercial Applications: Title: Advanced Semiconductor Manufacturing Process for High-Performance Devices This technology can be utilized in the production of cutting-edge electronic devices such as smartphones, tablets, and computers, enhancing their performance and efficiency in various applications.
Questions about the technology: 1. How does the method of forming isolations and semiconductor fins contribute to the performance of electronic devices? 2. What are the potential challenges in implementing this advanced semiconductor manufacturing process in large-scale production?
Original Abstract Submitted
a method includes forming isolations extending into a semiconductor substrate, recessing the isolation regions, wherein a semiconductor region between the isolation regions forms a semiconductor fin, forming a first dielectric layer on the isolation regions and the semiconductor fin, forming a second dielectric layer over the first dielectric layer, planarizing the second dielectric layer and the first dielectric layer, and recessing the first dielectric layer. a portion of the second dielectric layer protrudes higher than remaining portions of the first dielectric layer to form a protruding dielectric fin. a portion of the semiconductor fin protrudes higher than the remaining portions of the first dielectric layer to form a protruding semiconductor fin. a portion of the protruding semiconductor fin is recessed to form a recess, from which an epitaxy semiconductor region is grown. the epitaxy semiconductor region expands laterally to contact a sidewall of the protruding dielectric fin.
