Taiwan semiconductor manufacturing company, ltd. (20240203987). SEMICONDUCTOR DEVICE HAVING EPITAXY SOURCE/DRAIN REGIONS simplified abstract

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SEMICONDUCTOR DEVICE HAVING EPITAXY SOURCE/DRAIN REGIONS

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Yi-Jing Lee of Hsinchu City (TW)

Kun-Mu Li of Hsinchu County (TW)

Ming-Hua Yu of Hsinchu City (TW)

Tsz-Mei Kwok of Hsinchu City (TW)

SEMICONDUCTOR DEVICE HAVING EPITAXY SOURCE/DRAIN REGIONS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240203987 titled 'SEMICONDUCTOR DEVICE HAVING EPITAXY SOURCE/DRAIN REGIONS

The abstract describes a patent application for an IC structure that includes multiple fin structures, epitaxial structures, and sidewall spacers. The height difference between the second sidewall spacers is greater than that of the first sidewall spacers.

  • The IC structure consists of a first fin structure, a first epitaxial structure, first sidewall spacers, a second fin structure, a second epitaxial structure, and second sidewall spacers.
  • The first epitaxial structure is located on the first fin structure, while the second epitaxial structure is on the second fin structure.
  • The first and second sidewall spacers are positioned on opposite sidewalls of their respective epitaxial structures.
  • The height difference between the second sidewall spacers is greater than the height difference between the first sidewall spacers.

Potential Applications: - This technology could be used in semiconductor manufacturing processes to improve the performance of integrated circuits. - It may find applications in the development of advanced electronic devices with enhanced functionality.

Problems Solved: - The technology addresses the need for precise control over the height differences between sidewall spacers in IC structures. - It solves challenges related to optimizing the performance and efficiency of semiconductor devices.

Benefits: - Improved performance and efficiency of integrated circuits. - Enhanced control over the manufacturing process of semiconductor devices.

Commercial Applications: Title: Advanced Semiconductor Manufacturing Technology This technology could be utilized in the production of high-performance electronic devices, leading to advancements in various industries such as telecommunications, computing, and consumer electronics.

Questions about IC Structure: 1. How does the height difference between the second sidewall spacers impact the performance of the IC structure? - The height difference between the second sidewall spacers allows for more precise control over the structure's characteristics, potentially leading to improved performance.

2. What are the key advantages of using multiple fin structures in semiconductor manufacturing? - Multiple fin structures provide increased surface area for components, leading to enhanced performance and efficiency in integrated circuits.


Original Abstract Submitted

an ic structure includes a first fin structure, a first epitaxial structure, first sidewall spacers, a second fin structure, a second epitaxial structure, and second sidewall spacers. the first epitaxial structure is on the first structure. the first sidewall spacers are respectively on opposite sidewalls of the first epitaxial structure. the second epitaxial structure is on the second fin structure. the second sidewall spacers are respectively on opposite sidewalls of the second epitaxial structure. a height difference between the second sidewall spacers is greater than a height difference between the first sidewall spacers.

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