Taiwan semiconductor manufacturing company, ltd. (20240203923). METHODS OF FORMING BONDING STRUCTURES simplified abstract
Contents
METHODS OF FORMING BONDING STRUCTURES
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Hsing-Yuan Huang of Hsinchu (TW)
Chin-Szu Lee of Taoyuan City (TW)
METHODS OF FORMING BONDING STRUCTURES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240203923 titled 'METHODS OF FORMING BONDING STRUCTURES
The method described in the patent application involves the formation of a conductive pad over a substrate, followed by the formation of a multi-layer passivation structure on the conductive pad. The top portion of the multi-layer passivation structure is then patterned to create a first opening. A mask film is applied to the sidewall surfaces of the patterned top portion, and a first etching process is performed to remove a portion of the passivation structure under the first opening, resulting in a second opening. The mask film is then selectively removed, and a second etching process is carried out to create a third opening exposing the conductive pad. A bonding structure is formed in the third opening using a different etchant than the first etching process.
- Formation of conductive pad over substrate
- Creation of multi-layer passivation structure on the conductive pad
- Patterning of the passivation structure to form openings
- Application of mask film on sidewall surfaces
- Etching processes to remove portions of the passivation structure
- Formation of bonding structure in the opening
Potential Applications: - Semiconductor manufacturing - Microelectronics industry - Integrated circuit fabrication
Problems Solved: - Improving the efficiency of etching processes in passivation structures - Enhancing the reliability of bonding structures in semiconductor devices
Benefits: - Increased precision in creating openings in passivation structures - Enhanced performance and durability of semiconductor devices
Commercial Applications: Title: Advanced Semiconductor Manufacturing Process for Enhanced Bonding Structures This technology can be utilized in the production of various semiconductor devices, such as microprocessors, memory chips, and sensors. It can significantly improve the quality and reliability of bonding structures in these devices, leading to enhanced performance and longevity.
Questions about the technology: 1. How does the use of different etchants in the etching processes contribute to the effectiveness of the method? 2. What are the key advantages of patterning the passivation structure to create openings for bonding structures?
Original Abstract Submitted
a method includes forming a conductive pad over a substrate, forming a multi-layer passivation structure on the conducive pad, patterning a top portion of the multi-layer passivation structure to form a first opening, forming a mask film on sidewall surfaces of the patterned top portion of the multi-layer passivation structure, after the forming of the mask film, performing a first etching process to remove a portion of the multi-layer passivation structure directly under the first opening to form a second opening, after the performing of the first etching process, selectively removing the mask film, performing a second etching process to remove a portion of the multi-layer passivation structure directly under the second opening, thereby forming a third opening exposing the conductive pad, and forming a bonding structure in the third opening, where an etchant of the second etching process is different than an etchant of the first etching process.
