Taiwan semiconductor manufacturing company, ltd. (20240203885). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Chih-Hsuan Lin of Hsinchu City (TW)
Hsi Chung Chen of Tainan City (TW)
Chih-Teng Liao of Hsinchu City (TW)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240203885 titled 'SEMICONDUCTOR DEVICE
The method of manufacturing a semiconductor device involves several steps:
- Forming a first dielectric layer over a substrate
- Forming a metal layer in the first dielectric layer
- Forming an etch stop layer on the surface of the first dielectric layer and the metal layer
- Removing portions of the metal layer and the etch stop layer to create a recess in the metal layer
- Forming a tungsten plug in the recess, which is spaced apart from the bottom surface of the etch stop layer.
Key Features and Innovation:
- Integration of a metal layer, etch stop layer, and tungsten plug in the manufacturing process
- Creation of a recess in the metal layer for the tungsten plug
- Precise spacing of the recess from the etch stop layer
Potential Applications:
- Semiconductor device manufacturing
- Integrated circuit fabrication
Problems Solved:
- Improving the efficiency and reliability of semiconductor devices
- Enhancing the performance of integrated circuits
Benefits:
- Increased functionality and performance of semiconductor devices
- Enhanced durability and longevity of integrated circuits
Commercial Applications:
- Semiconductor industry for the production of advanced electronic devices
- Integrated circuit manufacturers for improved chip performance
Questions about the technology: 1. How does the integration of the metal layer, etch stop layer, and tungsten plug improve semiconductor device manufacturing? 2. What are the specific advantages of forming a recess in the metal layer for the tungsten plug?
Original Abstract Submitted
a method of manufacturing a semiconductor device includes forming a first dielectric layer over a substrate, forming a metal layer in the first dielectric layer, forming an etch stop layer on a surface of the first dielectric layer and the metal layer, removing portions of the metal layer and the etch stop layer to form a recess in the metal layer, and forming a tungsten plug in the recess. the recess is spaced apart from a bottom surface of the etch stop layer.
