Taiwan semiconductor manufacturing company, ltd. (20240203795). HARDMASK FORMATION WITH HYBRID MATERIALS IN SEMICONDUCTOR DEVICE simplified abstract
Contents
HARDMASK FORMATION WITH HYBRID MATERIALS IN SEMICONDUCTOR DEVICE
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Chung-Ting Ko of Kaohsiung City (TW)
Sung-En Lin of Hsinchu County (TW)
Chi-On Chui of Hsinchu City (TW)
HARDMASK FORMATION WITH HYBRID MATERIALS IN SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240203795 titled 'HARDMASK FORMATION WITH HYBRID MATERIALS IN SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract includes various components such as semiconductor strips, a dummy fin structure, channel layers, a gate structure, and crystalline and amorphous hard mask layers.
- The first and second semiconductor strips extend upwardly from the substrate and have a length along a first direction.
- The dummy fin structure is located laterally between the first and second semiconductor strips.
- The first and second channel layers extend above the semiconductor strips in a direction perpendicular to the substrate.
- The crystalline hard mask layer has a U-shaped cross-section and extends from the dummy fin structure.
- The amorphous hard mask layer is within the crystalline hard mask layer and also has a U-shaped cross-section.
Potential Applications: - This technology could be used in the manufacturing of advanced semiconductor devices for various electronic applications. - It may find applications in the development of high-performance integrated circuits and microprocessors.
Problems Solved: - This technology addresses the need for precise and efficient fabrication processes for semiconductor devices. - It helps in enhancing the performance and reliability of semiconductor components.
Benefits: - Improved precision and accuracy in the fabrication of semiconductor devices. - Enhanced performance and functionality of electronic devices utilizing this technology.
Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Performance This technology could be utilized in the production of cutting-edge electronic devices such as smartphones, laptops, and other consumer electronics. It may also have applications in the automotive industry for advanced driver assistance systems and autonomous vehicles.
Questions about the Technology: 1. How does the dummy fin structure contribute to the overall functionality of the semiconductor device? 2. What are the advantages of having both crystalline and amorphous hard mask layers in the device fabrication process?
Frequently Updated Research: Researchers are constantly exploring new materials and fabrication techniques to further improve the performance and efficiency of semiconductor devices. Stay updated on the latest advancements in the field to leverage the full potential of this technology.
Original Abstract Submitted
a semiconductor device includes a substrate, first and second semiconductor strips, a dummy fin structure, first and second channel layers, a gate structure, and crystalline and amorphous hard mask layers. the first and second semiconductor strips extend upwardly from the substrate and each has a length extending along a first direction. the dummy fin structure is laterally between the first and second semiconductor strips. the first and second channel layers extend in the first direction above the first and second semiconductor strips and are arranged in a second direction substantially perpendicular to the substrate. the crystalline hard mask layer extends upwardly from the dummy fin structure and has an u-shaped cross section. the amorphous hard mask layer is in the crystalline hard mask layer. the amorphous hard mask layer has an u-shaped cross section conformal to the u-shaped cross section of the crystalline hard mask layer.
