Taiwan semiconductor manufacturing company, ltd. (20240203488). STATIC RANDOM ACCESS MEMORY WITH WRITE ASSIST CIRCUIT simplified abstract
Contents
STATIC RANDOM ACCESS MEMORY WITH WRITE ASSIST CIRCUIT
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Hidehiro Fujiwara of Hsinchu (TW)
Sahil Preet Singh of Hsinchu (TW)
STATIC RANDOM ACCESS MEMORY WITH WRITE ASSIST CIRCUIT - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240203488 titled 'STATIC RANDOM ACCESS MEMORY WITH WRITE ASSIST CIRCUIT
The present disclosure describes embodiments of a write assist circuit. The write assist circuit includes a control circuit and a voltage generator. The control circuit receives memory address information associated with a memory write operation for memory cells. The voltage generator provides a reference voltage to one or more bitlines coupled to the memory cells. The voltage generator includes two capacitive elements, where during the memory write operation, one of the capacitive elements couples the reference voltage to a first negative voltage, and based on the memory address information, both capacitive elements cumulatively couple the reference voltage to a second negative voltage that is lower than the first negative voltage.
- Control circuit receives memory address information
- Voltage generator provides reference voltage to bitlines
- Voltage generator includes two capacitive elements
- One capacitive element couples reference voltage to first negative voltage
- Both capacitive elements cumulatively couple reference voltage to second negative voltage
Potential Applications: - Semiconductor memory systems - Data storage devices - Computer systems
Problems Solved: - Enhances memory write operations - Improves efficiency of memory cells
Benefits: - Increased performance of memory systems - Enhanced reliability of data storage
Commercial Applications: - Memory chip manufacturing industry - Data center technology providers
Questions about Write Assist Circuit: 1. How does the write assist circuit improve memory write operations? 2. What are the key components of the voltage generator in the write assist circuit?
Frequently Updated Research: - Stay updated on advancements in semiconductor memory technology for potential improvements in write assist circuits.
Original Abstract Submitted
the present disclosure describes embodiments of a write assist circuit. the write assist circuit can include a control circuit and a voltage generator. the control circuit can be configured to receive memory address information associated with a memory write operation for memory cells. the voltage generator can be configured to provide a reference voltage to one or more bitlines coupled to the memory cells. the voltage generator can include two capacitive elements, where during the memory write operation, (i) one of the capacitive elements can be configured to couple the reference voltage to a first negative voltage, and (ii) based on the memory address information, both capacitive elements can be configured to cumulatively couple the reference voltage to a second negative voltage that is lower than the first negative voltage.
