Taiwan semiconductor manufacturing company, ltd. (20240201579). METHOD OF MANUFACTURING INTEGRATED CIRCUIT simplified abstract
Contents
METHOD OF MANUFACTURING INTEGRATED CIRCUIT
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Hsu-Ting Huang of Hsinchu (TW)
Shih-Hsiang Lo of Hsinchu City (TW)
Ru-Gun Liu of Zhubei City (TW)
METHOD OF MANUFACTURING INTEGRATED CIRCUIT - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240201579 titled 'METHOD OF MANUFACTURING INTEGRATED CIRCUIT
The method described in the abstract involves calibrating an optical proximity correction (OPC) model by adjusting various parameters to account for long-range effects caused by an electron-beam lithography tool in mask making for manufacturing structures. This calibration process helps in generating a corrected mask layout based on the device layout and long-range correction map.
- Calibrating an OPC model by adjusting parameters related to long-range effects and geometric features
- Generating a device layout and calculating a grid pattern density map
- Creating a long-range correction map based on the calibrated OPC model and density map
- Performing OPC to generate a corrected mask layout using the long-range correction map and calibrated model
Potential Applications: - Semiconductor manufacturing - Photolithography processes - Mask making for integrated circuits
Problems Solved: - Addressing long-range effects in mask making processes - Improving accuracy and precision in mask layout generation
Benefits: - Enhanced quality and accuracy in mask making - Increased efficiency in semiconductor manufacturing processes
Commercial Applications: Title: Advanced Mask Making Technology for Semiconductor Industry This technology can be utilized in semiconductor fabrication facilities to improve the accuracy and efficiency of mask making processes, leading to higher quality integrated circuits and improved production yields.
Questions about Mask Data Synthesis and Mask Making: 1. How does the calibration of the OPC model impact the accuracy of the mask layout generation? The calibration process ensures that the model accounts for long-range effects and geometric features, resulting in a more precise and accurate mask layout.
2. What are the potential implications of using a long-range correction map in OPC for mask making? The long-range correction map helps in compensating for distortions caused by the electron-beam lithography tool, leading to improved mask accuracy and quality.
Original Abstract Submitted
a method for mask data synthesis and mask making includes calibrating an optical proximity correction (opc) model by adjusting a plurality of parameters including a first parameter and a second parameter, wherein the first parameter indicates a long-range effect caused by an electron-beam lithography tool for making a mask used to manufacture a structure, and the second parameter indicates a geometric feature of a structure or a manufacturing process to make the structure, generating a device layout, calculating a first grid pattern density map of the device layout, generating a long-range correction map, at least based on the calibrated opc model and the first grid pattern density map of the device layout, and performing an opc to generate a corrected mask layout, at least based on the generated long-range correction map and the calibrated opc model.
