Taiwan semiconductor manufacturing company, ltd. (20240179923). SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Hengyuan Lee of Hsinchu County (TW)
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240179923 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
Simplified Explanation
The semiconductor device described in the abstract consists of multiple layers including a first conductive layer, a memory layer, a second conductive layer, and a selector layer. The memory layer surrounds the first conductive layer, while the second conductive layer is positioned next to the memory layer. The selector layer is placed on top of the second conductive layer, with different sides of the second conductive layer being covered by the memory layer and the selector layer, and one side being exposed.
- The semiconductor device includes a first conductive layer.
- The memory layer surrounds the first conductive layer.
- A second conductive layer is positioned next to the memory layer.
- A selector layer is placed on top of the second conductive layer.
- Different sides of the second conductive layer are covered by the memory layer and the selector layer.
- One side of the second conductive layer is exposed.
Potential Applications
This technology could be applied in:
- Memory storage devices
- Semiconductor manufacturing
- Integrated circuits
Problems Solved
This technology helps in:
- Improving memory storage capacity
- Enhancing semiconductor device performance
- Increasing data processing speed
Benefits
The benefits of this technology include:
- Higher efficiency in data storage
- Improved overall device functionality
- Enhanced data security
Potential Commercial Applications
This technology has potential commercial applications in:
- Consumer electronics
- Data centers
- Telecommunications industry
Possible Prior Art
One possible prior art for this technology could be:
- Existing semiconductor memory devices with similar layer structures
What are the potential limitations of this technology?
Potential limitations of this technology could include:
- Complexity in manufacturing processes
- Cost of production
How does this technology compare to existing memory storage solutions?
This technology offers:
- Higher memory storage capacity
- Improved performance
- Enhanced data security
Original Abstract Submitted
a semiconductor device includes a first conductive layer, a memory layer, a second conductive layer and a selector layer. the memory layer surrounds the first conductive layer. the second conductive layer is disposed aside the memory layer. the selector layer is disposed on the second conductive layer. a first side of the second conductive layer is covered by the memory layer, a second side of the second conductive layer is covered by the selector layer, and a third side of the second conductive layer is exposed by the selector layer.
