Taiwan semiconductor manufacturing company, ltd. (20240179884). SEMICONDUCTOR DEVICE AND METHOD FOR FORMING A SRAM MEMORY CELL STRUCTURE simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD FOR FORMING A SRAM MEMORY CELL STRUCTURE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD FOR FORMING A SRAM MEMORY CELL STRUCTURE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING A SRAM MEMORY CELL STRUCTURE
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Hidehiro Fujiwara of Hsinchu (TW)
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING A SRAM MEMORY CELL STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240179884 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR FORMING A SRAM MEMORY CELL STRUCTURE
Simplified Explanation
The abstract of the patent application describes an apparatus with memory cells, where a first memory cell has a first write port in a first doping region and a first read port in a second doping region, separated by a second write port of a neighboring memory cell.
- The innovation involves memory cells with distinct write and read ports, improving data access efficiency.
- The design allows for better organization of memory cells, reducing interference between write and read operations.
- By separating the write and read ports, the apparatus can achieve faster data processing speeds and lower power consumption.
Potential Applications
The technology could be applied in:
- High-speed data storage systems
- Embedded systems in electronic devices
- Advanced computing architectures
Problems Solved
The technology addresses issues such as:
- Data access bottlenecks in memory cells
- Interference between write and read operations
- Power consumption inefficiencies in memory devices
Benefits
The benefits of this technology include:
- Improved data access speed
- Enhanced memory cell organization
- Reduced power consumption in memory devices
Potential Commercial Applications
The technology could find commercial applications in:
- Data centers
- Mobile devices
- Automotive electronics
Possible Prior Art
One possible prior art could be the use of separate read and write ports in memory cells in previous memory device designs.
Unanswered Questions
How does this technology compare to existing memory cell designs in terms of data access speed?
The article does not provide a direct comparison with existing memory cell designs to evaluate the improvement in data access speed.
What are the potential challenges in implementing this technology on a larger scale in memory devices?
The article does not address the potential challenges that may arise when scaling up the implementation of this technology in memory devices.
Original Abstract Submitted
an apparatus includes memory cells. a first memory cell of the memory cells includes a first write port laid out in a first doping region and a first read port laid out in a second doping region. the first read port is separated from the first write port by a second write port of a second memory cell of the memory cells.
