Taiwan semiconductor manufacturing company, ltd. (20240178328). SCHOTTKY BARRIER DIODE (SBD) LEAKAGE CURRENT BLOCKING STRUCTURE simplified abstract
Contents
- 1 SCHOTTKY BARRIER DIODE (SBD) LEAKAGE CURRENT BLOCKING STRUCTURE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SCHOTTKY BARRIER DIODE (SBD) LEAKAGE CURRENT BLOCKING STRUCTURE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SCHOTTKY BARRIER DIODE (SBD) LEAKAGE CURRENT BLOCKING STRUCTURE
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Cheng-Hsien Wu of Hsinchu (TW)
Chien-Lin Tseng of Zhubei (TW)
Ting-Chang Chang of Hsinchu (TW)
SCHOTTKY BARRIER DIODE (SBD) LEAKAGE CURRENT BLOCKING STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240178328 titled 'SCHOTTKY BARRIER DIODE (SBD) LEAKAGE CURRENT BLOCKING STRUCTURE
Simplified Explanation
The abstract describes a patent application for a Schottky barrier diode (SBD) structure with a current blockage feature to prevent current leakage at an interface with shallow trench isolation regions surrounding the anode region of the SBD structure.
- The SBD structure includes a current blockage feature to inhibit current leakage at the interface with shallow trench isolation regions.
- The method of forming the SBD structure involves incorporating the current blockage feature.
- The current blockage feature helps improve the performance and reliability of the SBD structure.
Potential Applications
The technology described in this patent application could be applied in various electronic devices and circuits where Schottky barrier diodes are used, such as power supplies, rectifiers, and RF applications.
Problems Solved
This technology addresses the issue of current leakage at the interface of Schottky barrier diodes with shallow trench isolation regions, which can lead to reduced efficiency and reliability of the diode.
Benefits
The current blockage feature improves the performance and reliability of the SBD structure, leading to better overall device performance and longevity.
Potential Commercial Applications
The technology could be valuable for semiconductor manufacturers producing electronic components that rely on Schottky barrier diodes, potentially leading to more efficient and reliable products.
Possible Prior Art
One possible prior art could be the use of other methods to prevent current leakage in Schottky barrier diodes, such as different isolation techniques or materials.
Unanswered Questions
How does the current blockage feature impact the overall efficiency of the SBD structure?
The current blockage feature helps prevent current leakage, but it is essential to understand how this feature affects the overall efficiency of the Schottky barrier diode.
What are the specific manufacturing processes involved in incorporating the current blockage feature in the SBD structure?
Understanding the detailed manufacturing processes can provide insights into the feasibility and scalability of implementing this technology in commercial production.
Original Abstract Submitted
embodiments include a schottky barrier diode (sbd) structure and method of forming the same, the sbd structure including a current blockage feature to inhibit current from leaking at an interface with a shallow trench isolation regions surrounding an anode region of the sbd structure.
