Taiwan semiconductor manufacturing company, ltd. (20240178321). Fin Field-Effect Transistor Device with Composite Liner for the Fin simplified abstract
Contents
- 1 Fin Field-Effect Transistor Device with Composite Liner for the Fin
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Fin Field-Effect Transistor Device with Composite Liner for the Fin - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
Fin Field-Effect Transistor Device with Composite Liner for the Fin
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Wan-Yi Kao of Baoshan Township (TW)
Fin Field-Effect Transistor Device with Composite Liner for the Fin - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240178321 titled 'Fin Field-Effect Transistor Device with Composite Liner for the Fin
Simplified Explanation
The method described in the patent application involves forming a semiconductor device with a fin protruding above a substrate, applying a surface treatment process to convert a portion of the liner into a conversion layer, forming isolation regions, and then adding a gate dielectric and gate electrode.
- Formation of a fin protruding above a substrate
- Application of a liner over the fin
- Surface treatment process to convert the upper layer of the liner into a conversion layer
- Formation of isolation regions on opposing sides of the fin
- Addition of a gate dielectric over the conversion layer
- Formation of a gate electrode over the fin and gate dielectric
Potential Applications
The technology can be applied in the manufacturing of advanced semiconductor devices, such as high-performance transistors and integrated circuits.
Problems Solved
This method helps in improving the performance and efficiency of semiconductor devices by enhancing the gate dielectric and gate electrode formation process.
Benefits
The benefits of this technology include increased device performance, improved reliability, and enhanced scalability of semiconductor devices.
Potential Commercial Applications
Potential commercial applications of this technology include the production of cutting-edge electronic devices for various industries, including telecommunications, computing, and consumer electronics.
Possible Prior Art
One possible prior art for this technology could be the use of similar surface treatment processes in the fabrication of semiconductor devices to improve their performance and reliability.
Unanswered Questions
1. What specific types of surface treatment processes are used in the conversion layer formation? 2. How does the conversion layer impact the overall functionality of the semiconductor device?
Original Abstract Submitted
a method of forming a semiconductor device includes forming a fin protruding above a substrate; forming a liner over the fin; performing a surface treatment process to convert an upper layer of the liner distal to the fin into a conversion layer, the conversion layer comprising an oxide or a nitride of the liner; forming isolation regions on opposing sides of the fin after the surface treatment process; forming a gate dielectric over the conversion layer after forming the isolation regions; and forming a gate electrode over the fin and over the gate dielectric.
