Taiwan semiconductor manufacturing company, ltd. (20240178319). DIPOLES IN SEMICONDUCTOR DEVICES simplified abstract

DIPOLES IN SEMICONDUCTOR DEVICES

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Hsiang-Pi Chang of New Taipei City (TW)

Yen-Tien Tung of Hsinchu (TW)

Dawei Heh of Hsinchu (TW)

Chung-Liang Cheng of Changhua County (TW)

I-Ming Chang of Hsinchu (TW)

Yao-Sheng Huang of Kaohsiung City (TW)

Tzer-Min Shen of Hsinchu (TW)

Huang-Lin Chao of Hillsboro OR (US)

DIPOLES IN SEMICONDUCTOR DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240178319 titled 'DIPOLES IN SEMICONDUCTOR DEVICES

Simplified Explanation

The semiconductor device described in the patent application includes a substrate, an interfacial layer, and a high-k dielectric layer. The high-k dielectric layer and/or the interfacial layer are doped with different dopant species to create dipole elements with different polarities for p-type and n-type transistors.

• The semiconductor device includes a substrate, interfacial layer, and high-k dielectric layer.
• The high-k dielectric layer and/or interfacial layer are doped with first, second, and third dopant species.
• The first and second dopant species form dipole elements with a first polarity, while the third dopant species forms dipole elements with a second polarity.
• The concentration ratios of the dopant species differ between p-type and n-type transistors.

Potential Applications

The technology described in this patent application could be applied in the development of advanced semiconductor devices, particularly in the field of integrated circuits and microelectronics.

Problems Solved

This technology addresses the challenge of enhancing the performance and efficiency of semiconductor devices by optimizing the dopant species and concentration ratios in the high-k dielectric layer and interfacial layer.

Benefits

The benefits of this technology include improved transistor performance, reduced power consumption, and increased reliability of semiconductor devices.

Potential Commercial Applications

The technology could find commercial applications in the production of next-generation electronic devices, such as smartphones, tablets, computers, and other consumer electronics.

Possible Prior Art

One possible prior art in this field could be the use of different dopant species in semiconductor devices to modify their electrical properties and performance.

How does the doping of the high-k dielectric layer and interfacial layer impact the overall performance of the semiconductor device?

The article does not delve into the specific effects of the dopant species and concentration ratios on the functionality and efficiency of the semiconductor device.

What are the potential challenges or limitations associated with implementing this technology in large-scale semiconductor manufacturing processes?

The article does not address the practical aspects or scalability of incorporating this technology into mass production of semiconductor devices.

Original Abstract Submitted

a semiconductor device includes a substrate, an interfacial layer formed on the semiconductor substrate, and a high-k dielectric layer formed on the interfacial layer. at least one of the high-k dielectric layer and the interfacial layer is doped with: a first dopant species, a second dopant species, and a third dopant species. the first dopant species and the second dopant species form a plurality of first dipole elements having a first polarity. the third dopant species forms a plurality of second dipole elements having a second polarity. a first concentration ratio of the first concentration of the first dopant species to the second concentration of the second dopant species of the p-type transistor is different from a second concentration ratio of the first concentration of the first dopant species to the second concentration of the second dopant species of the n-type transistor.