Taiwan semiconductor manufacturing company, ltd. (20240178308). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Aryan Afzalian of Chastre (BE)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240178308 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The method described in the patent application involves etching a substrate to form a core structure, creating shallow trench isolation features, doping the substrate and core structure to form source/drain regions, growing a barrier layer, and forming spacers and a shell with different doping conductivity types.
- Substrate etched to form core structure protruding out of plane
- Shallow trench isolation features formed on opposite sides of core structure
- Doping of substrate and lower portion of core structure for first source/drain region
- Growth of barrier layer on upper portion of core structure
- Formation of first spacer covering STI features and lower portion of core structure
- Shell formed wrapping upper portion of core structure and barrier layer
- Second source/drain region formed with different doping concentration over shell
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- Potential Applications
This technology could be applied in the semiconductor industry for advanced transistor manufacturing processes.
- Problems Solved
This technology helps in improving the performance and efficiency of transistors by optimizing the doping concentrations in different regions.
- Benefits
The benefits of this technology include enhanced transistor performance, increased efficiency, and potentially reduced power consumption in electronic devices.
- Potential Commercial Applications
This technology could be utilized in the production of high-performance integrated circuits for various electronic devices, such as smartphones, computers, and IoT devices.
- Possible Prior Art
One possible prior art could be the use of similar doping techniques in semiconductor manufacturing processes to enhance transistor performance.
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- Unanswered Questions
- How does this technology compare to existing methods of transistor optimization?
This article does not provide a direct comparison with existing methods, leaving the reader to wonder about the specific advantages of this new approach.
- What are the potential challenges in implementing this technology on an industrial scale?
The article does not address the scalability and practicality of implementing this technology in large-scale semiconductor manufacturing processes, leaving room for further exploration into potential challenges.
Original Abstract Submitted
a method includes the following steps. a substrate is etched, forming a core structure protruding out of a plane of the substrate. shallow trench isolation (sti) features are formed on opposite sides of the core structure. the substrate and a lower portion of the core structure are doped to form a first source/drain region with a first doping concentration. a barrier layer is grown on an upper portion of the core structure. a first spacer is formed covering the sti features and covering the lower portion of core structure. a shell is formed wrapping the upper portion of the core structure and the barrier layer. the shell and the upper portion of the core structure have different doping conductivity types. a second source/drain region is formed with a second doping concentration over the shell. the first doping concentration and the second doping concentration are different from each other.
