Taiwan semiconductor manufacturing company, ltd. (20240178303). STRUCTURE AND METHOD FOR VERTICAL TUNNELING FIELD EFFECT TRANSISTOR WITH LEVELED SOURCE AND DRAIN simplified abstract
Contents
- 1 STRUCTURE AND METHOD FOR VERTICAL TUNNELING FIELD EFFECT TRANSISTOR WITH LEVELED SOURCE AND DRAIN
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 STRUCTURE AND METHOD FOR VERTICAL TUNNELING FIELD EFFECT TRANSISTOR WITH LEVELED SOURCE AND DRAIN - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
STRUCTURE AND METHOD FOR VERTICAL TUNNELING FIELD EFFECT TRANSISTOR WITH LEVELED SOURCE AND DRAIN
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Harry-Hak-Lay Chuang of Singapore (SG)
Yi-Ren Chen of Taoyuan County (TW)
Chao-Hsiung Wang of Hsin-Chu City (TW)
STRUCTURE AND METHOD FOR VERTICAL TUNNELING FIELD EFFECT TRANSISTOR WITH LEVELED SOURCE AND DRAIN - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240178303 titled 'STRUCTURE AND METHOD FOR VERTICAL TUNNELING FIELD EFFECT TRANSISTOR WITH LEVELED SOURCE AND DRAIN
Simplified Explanation
The present disclosure describes a semiconductor structure with a field effect transistor (FET) formed on a semiconductor substrate, including two semiconductor mesas and doped features of different conductivity types.
- Semiconductor structure with FET:
* Includes a semiconductor substrate with two regions. * Features a first semiconductor mesa in the first region. * Contains a second semiconductor mesa in the second region. * Comprises a FET with doped features in the first semiconductor mesa. * Has a channel in the middle portion of the first semiconductor mesa. * Utilizes a gate formed on the sidewall of the first semiconductor mesa.
Potential Applications
The semiconductor structure with the described FET can be used in:
- Integrated circuits
- Microprocessors
- Memory devices
Problems Solved
This technology addresses issues related to:
- Improving semiconductor device performance
- Enhancing transistor efficiency
- Reducing power consumption
Benefits
The benefits of this semiconductor structure include:
- Higher speed and performance
- Lower power consumption
- Increased reliability and durability
Potential Commercial Applications
The semiconductor structure can be applied in various industries, such as:
- Electronics manufacturing
- Telecommunications
- Automotive sector
Possible Prior Art
One possible prior art for this technology could be the use of similar FET structures in semiconductor devices for improving performance and efficiency.
Unanswered Questions
How does this semiconductor structure compare to existing FET designs in terms of performance and efficiency?
The article does not provide a direct comparison with existing FET designs to evaluate the performance and efficiency improvements offered by this semiconductor structure.
What specific manufacturing processes are required to fabricate this semiconductor structure with the described FET?
The article does not detail the specific manufacturing processes needed to fabricate this semiconductor structure with the described FET, leaving a gap in understanding the practical implementation of this technology.
Original Abstract Submitted
the present disclosure provides one embodiment of a semiconductor structure. the semiconductor structure includes a semiconductor substrate having a first region and a second region; a first semiconductor mesa formed on the semiconductor substrate within the first region; a second semiconductor mesa formed on the semiconductor substrate within the second region; and a field effect transistor (fet) formed on the semiconductor substrate. the fet includes a first doped feature of a first conductivity type formed in a top portion of the first semiconductor mesa; a second doped feature of a second conductivity type formed in a bottom portion of the first semiconductor mesa, the second semiconductor mesa, and a portion of the semiconductor substrate between the first and second semiconductor mesas; a channel in a middle portion of the first semiconductor mesa and interposed between the source and drain; and a gate formed on sidewall of the first semiconductor mesa.
