Taiwan semiconductor manufacturing company, ltd. (20240178302). SEMICONDUCTOR DEVICE WITH PROTECTIVE GATE STRUCTURE AND METHODS OF FABRICATION THEREOF simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE WITH PROTECTIVE GATE STRUCTURE AND METHODS OF FABRICATION THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE WITH PROTECTIVE GATE STRUCTURE AND METHODS OF FABRICATION THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE WITH PROTECTIVE GATE STRUCTURE AND METHODS OF FABRICATION THEREOF
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
SEMICONDUCTOR DEVICE WITH PROTECTIVE GATE STRUCTURE AND METHODS OF FABRICATION THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240178302 titled 'SEMICONDUCTOR DEVICE WITH PROTECTIVE GATE STRUCTURE AND METHODS OF FABRICATION THEREOF
Simplified Explanation
The semiconductor device structure described in the abstract includes a source/drain epitaxial feature with multiple epitaxial layers, a silicide layer, a source/drain contact, and a metal capping layer.
- The semiconductor device structure includes a source/drain epitaxial feature with a first, second, and third epitaxial layer.
- The device structure also includes a first silicide layer in contact with the substrate and the epitaxial layers.
- A first source/drain contact extends through the substrate from one side to the other.
- A first metal capping layer is disposed between the first silicide layer and the first source/drain contact.
Potential Applications
The technology described in this patent application could be applied in the manufacturing of advanced semiconductor devices, such as high-performance transistors.
Problems Solved
This technology solves the problem of improving the performance and reliability of semiconductor devices by optimizing the structure of the source/drain region.
Benefits
The benefits of this technology include enhanced device performance, increased reliability, and potentially lower power consumption in semiconductor devices.
Potential Commercial Applications
The technology could have commercial applications in the semiconductor industry for the production of high-performance integrated circuits.
Possible Prior Art
One possible prior art for this technology could be the use of different materials or structures in the source/drain region of semiconductor devices to improve performance and reliability.
Unanswered Questions
How does this technology compare to existing solutions in terms of performance and cost?
This article does not provide a direct comparison with existing solutions in terms of performance and cost.
What are the specific manufacturing processes required to implement this technology?
The article does not detail the specific manufacturing processes needed to implement this technology.
Original Abstract Submitted
a semiconductor device structure is provided. the semiconductor device structure includes a substrate having a first side and a second side opposing the first side, a source/drain epitaxial feature disposed adjacent the first side of the substrate, wherein the source/drain epitaxial feature comprises a first epitaxial layer, a second epitaxial layer in contact with the first epitaxial layer, and a third epitaxial layer having sidewalls surrounded by and in contact with the second epitaxial layer. the device structure also includes a first silicide layer in contact with the substrate, the first, second, and third epitaxial layers, a first source/drain contact extending through the substrate from the first side to the second side, and a first metal capping layer disposed between the first silicide layer and the first source/drain contact.
