Taiwan semiconductor manufacturing company, ltd. (20240178300). SEMICONDUCTOR DEVICE simplified abstract

SEMICONDUCTOR DEVICE

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Chang-Yin Chen of Taipei City (TW)

Che-Cheng Chang of New Taipei City (TW)

Chih-Han Lin of Hsinchu City (TW)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240178300 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation

The patent application describes a device with a semiconductor fin extending from a substrate, a gate structure across the fin, and a multilayer gate spacer on the gate structure's sidewall. The multilayer gate spacer includes inner and outer spacer layers with a dielectric structure between them.

• The device includes a semiconductor fin extending from a substrate.
• A gate structure extends across the semiconductor fin.
• A multilayer gate spacer is present on the sidewall of the gate structure.
• The multilayer gate spacer consists of an inner spacer layer, an outer spacer layer, and a dielectric structure.
• The inner spacer layer has a vertical portion along the gate structure's sidewall and a lateral portion extending away from the gate structure.
• An air gap separates the outer spacer layer from the vertical portion of the inner spacer layer.
• The dielectric structure separates the bottom end of the outer spacer layer from the lateral portion of the inner spacer layer.

Potential Applications

The technology described in the patent application could be applied in the development of advanced semiconductor devices, such as transistors and integrated circuits.

Problems Solved

This technology helps in enhancing the performance and efficiency of semiconductor devices by providing precise control over the gate structure, reducing leakage currents, and improving overall device reliability.

Benefits

The benefits of this technology include improved device performance, increased energy efficiency, and enhanced reliability, leading to better overall functionality of semiconductor devices.

Potential Commercial Applications

The technology could find potential commercial applications in the semiconductor industry for the production of high-performance electronic devices, leading to advancements in computing, communication, and other technological fields.

Possible Prior Art

One possible prior art could be the use of single-layer gate spacers in semiconductor devices, which may not provide the same level of control and efficiency as the multilayer gate spacer described in the patent application.

Unanswered Questions

How does the multilayer gate spacer impact the overall size of the semiconductor device?

The patent application does not explicitly mention the impact of the multilayer gate spacer on the device's size or dimensions.

What manufacturing processes are required to implement the multilayer gate spacer in semiconductor devices?

The patent application does not detail the specific manufacturing processes needed to incorporate the multilayer gate spacer into semiconductor devices.

Original Abstract Submitted

a device includes a semiconductor fin semiconductor fin extending from a substrate, a gate structure extending across the semiconductor fin, and a multilayer gate spacer on a sidewall of the gate structure. the multilayer gate spacer includes an inner spacer layer, an outer spacer layer, and a dielectric structure. the inner spacer layer has a vertical portion extending along the sidewall of the gate structure, and a lateral portion laterally extending from the vertical portion in a direction away from the gate structure. the outer spacer layer is spaced apart from the vertical portion of the inner spacer layer by an air gap. the dielectric structure spaces apart a bottom end of the outer spacer layer from the lateral portion of the inner spacer layer.