Taiwan semiconductor manufacturing company, ltd. (20240178271). INTEGRATED CIRCUIT DEVICE WITH SOURCE/DRAIN BARRIER simplified abstract
Contents
- 1 INTEGRATED CIRCUIT DEVICE WITH SOURCE/DRAIN BARRIER
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 INTEGRATED CIRCUIT DEVICE WITH SOURCE/DRAIN BARRIER - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
INTEGRATED CIRCUIT DEVICE WITH SOURCE/DRAIN BARRIER
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Feng-Ching Chu of Hsinchu (TW)
Wei-Yang Lee of Taipei City (TW)
Yen-Ming Chen of Hsin-Chu County (TW)
Feng-Cheng Yang of Hsinchu County (TW)
INTEGRATED CIRCUIT DEVICE WITH SOURCE/DRAIN BARRIER - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240178271 titled 'INTEGRATED CIRCUIT DEVICE WITH SOURCE/DRAIN BARRIER
Simplified Explanation
The abstract describes a method for forming an integrated circuit device by etching a portion of a device fin to create a source/drain recess and forming a dielectric barrier within the recess. The workpiece is then cleaned to leave the dielectric barrier at the bottom of the recess, and a source/drain feature is formed with the dielectric barrier between it and the rest of the device fin.
- Method for forming an integrated circuit device:
- Receive a workpiece with a substrate and a device fin - Etch a portion of the device fin to create a source/drain recess - Form a dielectric barrier within the source/drain recess - Clean the workpiece to leave the dielectric barrier at the bottom of the recess - Form a source/drain feature with the dielectric barrier between it and the device fin
Potential Applications
This technology can be applied in the semiconductor industry for manufacturing integrated circuits with improved performance and reliability.
Problems Solved
- Enhanced device performance - Improved reliability of integrated circuits
Benefits
- Increased efficiency in integrated circuit manufacturing - Enhanced device performance and reliability - Potential for smaller and more powerful electronic devices
Potential Commercial Applications
Optimizing semiconductor manufacturing processes for improved integrated circuit performance.
Possible Prior Art
Prior methods for forming source/drain features in integrated circuits may not have included the formation of a dielectric barrier within the source/drain recess.
Unanswered Questions
How does the presence of the dielectric barrier impact the electrical properties of the integrated circuit device?
The abstract does not provide details on how the dielectric barrier affects the electrical characteristics of the device.
Are there any limitations or challenges associated with implementing this method in large-scale semiconductor manufacturing?
The abstract does not address any potential obstacles or limitations that may arise when scaling up this method for mass production.
Original Abstract Submitted
various examples of an integrated circuit device and a method for forming the device are disclosed herein. in an example, a method includes receiving a workpiece that includes a substrate, and a device fin extending above the substrate. the device fin includes a channel region. a portion of the device fin adjacent the channel region is etched, and the etching creates a source/drain recess and forms a dielectric barrier within the source/drain recess. the workpiece is cleaned such that a bottommost portion of the dielectric barrier remains within a bottommost portion of the source/drain recess. a source/drain feature is formed within the source/drain recess such that the bottommost portion of the dielectric barrier is disposed between the source/drain feature and a remainder of the device fin.
