Taiwan semiconductor manufacturing company, ltd. (20240178264). INTEGRATED CIRCUIT PHOTODETECTOR simplified abstract
Contents
- 1 INTEGRATED CIRCUIT PHOTODETECTOR
INTEGRATED CIRCUIT PHOTODETECTOR
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Ying-Hsun Chen of Hsinchu (TW)
INTEGRATED CIRCUIT PHOTODETECTOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240178264 titled 'INTEGRATED CIRCUIT PHOTODETECTOR
Simplified Explanation
The abstract describes an integrated circuit with a photodetector that includes dielectric structures in a trench in a semiconductor substrate, covered by a photosensitive material with a higher index of refraction than the dielectric structures.
- The integrated circuit includes a photodetector with dielectric structures in a trench.
- The photosensitive material covers the dielectric structures in the trench.
- A dielectric layer covers the photosensitive material.
- The photosensitive material has a higher index of refraction than the dielectric structures and the dielectric layer.
Potential Applications
This technology could be used in:
- Optical communication systems
- Image sensors
- Light detection and ranging (LiDAR) systems
Problems Solved
This technology solves issues related to:
- Improving the sensitivity of photodetectors
- Enhancing the efficiency of light detection in integrated circuits
Benefits
The benefits of this technology include:
- Increased performance and sensitivity of photodetectors
- Enhanced signal detection capabilities in optical systems
Potential Commercial Applications
This technology could be applied in:
- Telecommunications industry
- Automotive sector for autonomous vehicles
- Medical imaging devices
Possible Prior Art
Prior art may include:
- Photodetectors with traditional structures
- Integrated circuits with standard photodetector configurations
Unanswered Questions
How does this technology compare to existing photodetector designs?
This article does not provide a direct comparison to existing photodetector designs. Further research or a comparative analysis would be needed to determine the advantages and disadvantages of this technology over traditional photodetector structures.
What are the specific performance metrics of this integrated circuit compared to others on the market?
The article does not detail specific performance metrics of this integrated circuit in comparison to other products available. Additional testing and analysis would be required to evaluate the performance of this technology in real-world applications.
Original Abstract Submitted
an integrated circuit includes a photodetector. the photodetector includes one or more dielectric structures positioned in a trench in a semiconductor substrate. the photodetector includes a photosensitive material positioned in the trench and covering the one or more dielectric structures. a dielectric layer covers the photosensitive material. the photosensitive material has an index of refraction that is greater than the indices of refraction of the dielectric structures and the dielectric layer.
