Taiwan semiconductor manufacturing company, ltd. (20240178228). SEMICONDUCTOR DEVICE AND LOGIC DEVICE simplified abstract

SEMICONDUCTOR DEVICE AND LOGIC DEVICE

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Hung-Li Chiang of Taipei City (TW)

Jer-Fu Wang of Taipei City (TW)

Iuliana Radu of Hsinchu County (TW)

SEMICONDUCTOR DEVICE AND LOGIC DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240178228 titled 'SEMICONDUCTOR DEVICE AND LOGIC DEVICE

Simplified Explanation

The semiconductor device described in the abstract includes a first field effect transistor (FET) and a second FET, both disposed on a semiconductor substrate. The first FET has vertically separated first channel structures, while the second FET has second channel structures arranged along a lateral direction. The conductive type of the second FET is complementary to the conductive type of the first FET.

• The semiconductor device includes a first FET with vertically separated first channel structures and a second FET with second channel structures arranged along a lateral direction.
• The second FET is complementary in conductive type to the first FET.

Potential Applications

The technology described in the patent application could be applied in:

• Integrated circuits
• Semiconductor devices
• Logic devices

Problems Solved

This technology helps in:

• Improving the performance of semiconductor devices
• Enhancing the efficiency of logic devices

Benefits

The benefits of this technology include:

• Increased functionality
• Higher speed operation
• Better integration capabilities

Potential Commercial Applications

The potential commercial applications of this technology could be in:

• Electronics industry
• Semiconductor manufacturing sector
• Research and development organizations

Possible Prior Art

One possible prior art for this technology could be:

• Vertical field effect transistors with complementary conductive types

What is the manufacturing process for creating the vertically separated channel structures in the first FET?

The manufacturing process for creating the vertically separated channel structures in the first FET involves precise lithography and etching techniques to form thin sheets with opposite major planar surfaces.

How does the complementary conductive type of the second FET enhance the overall performance of the semiconductor device?

The complementary conductive type of the second FET allows for better control and modulation of the device's electrical characteristics, leading to improved efficiency and functionality.

Original Abstract Submitted

a semiconductor device and a logic device formed of the semiconductor device are provided. the semiconductor device includes a first field effect transistor (fet), disposed on a semiconductor substrate, and including vertically separated first channel structures formed as thin sheets each having opposite major planar surfaces facing toward and away from the semiconductor substrate; and a second fet, disposed on the semiconductor substrate and overlapped with the first fet. a conductive type of the second fet is complementary to a conductive type of the first fet. second channel structures of the second fet are separately arranged along a lateral direction, and formed as thin walls.