Taiwan semiconductor manufacturing company, ltd. (20240178224). METHOD FOR FORMING FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE simplified abstract

METHOD FOR FORMING FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Chung-Shu Wu of Taoyuan City (TW)

Shu-Uei Jang of Hsinchu City (TW)

Wei-Yeh Tang of Taoyuan City (TW)

Ryan Chia-Jen Chen of Hsinchu (TW)

An-Chyi Wei of Hsinchu City (TW)

METHOD FOR FORMING FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240178224 titled 'METHOD FOR FORMING FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE

Simplified Explanation

The abstract describes a method for forming a FinFET device structure with specific features such as a first fin structure, a first liner layer, and a gate dielectric layer.

• The method involves creating a first fin structure that extends above a substrate.
• A first liner layer is then formed on a first sidewall surface of the first fin structure.
• Subsequently, a gate dielectric layer is formed over the first fin structure and the first liner layer.
• The sidewall surface of the gate dielectric layer is aligned with the sidewall surface of the first liner layer.

Potential Applications

The technology described in the patent application can be applied in the semiconductor industry for manufacturing advanced FinFET devices with improved performance and efficiency.

Problems Solved

This technology addresses the need for enhancing the performance and functionality of FinFET devices by providing a method for precise alignment of different layers within the device structure.

Benefits

The benefits of this technology include increased device performance, improved power efficiency, and enhanced reliability of FinFET devices.

Potential Commercial Applications

The technology has potential commercial applications in the production of high-performance integrated circuits for various electronic devices, such as smartphones, computers, and other consumer electronics.

Possible Prior Art

One possible prior art in this field could be the development of methods for fabricating FinFET devices with optimized structures and materials to improve device characteristics and performance.

What materials are used in the first liner layer of the FinFET device structure?

The abstract does not specify the exact materials used in the first liner layer of the FinFET device structure.

How does the alignment of the sidewall surfaces of the gate dielectric layer and the first liner layer impact device performance?

The abstract does not provide information on how the alignment of the sidewall surfaces affects device performance.

Original Abstract Submitted

a method for forming a finfet device structure is provided. the finfet device structure includes a first fin structure extending above a substrate, and a first liner layer formed on a first sidewall surface of the first fin structure. the finfet device structure includes a gate dielectric layer formed over the first fin structure and the first liner layer, wherein a sidewall surface of the gate dielectric layer is aligned with a sidewall surface of the first liner layer.