Taiwan semiconductor manufacturing company, ltd. (20240178216). SEMICONDUCTOR DEVICE HAVING MULTIPLE ELECTROSTATIC DISCHARGE (ESD) PATHS simplified abstract

SEMICONDUCTOR DEVICE HAVING MULTIPLE ELECTROSTATIC DISCHARGE (ESD) PATHS

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Po-Lin Peng of Taoyuan City (TW)

Li-Wei Chu of Hsinchu City (TW)

Ming-Fu Tsai of Hsinchu City (TW)

Jam-Wem Lee of Hsinchu City (TW)

Yu-Ti Su of Tainan City (TW)

SEMICONDUCTOR DEVICE HAVING MULTIPLE ELECTROSTATIC DISCHARGE (ESD) PATHS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240178216 titled 'SEMICONDUCTOR DEVICE HAVING MULTIPLE ELECTROSTATIC DISCHARGE (ESD) PATHS

Simplified Explanation

The semiconductor device described in the abstract includes multiple doped regions and wells configured to provide an electrostatic discharge path between an input/output pad and a voltage terminal.

• The device includes a first doped region and a second doped region coupled to a first voltage terminal, configured as terminals of a diode.
• A first well of the first conductivity type surrounds the first and second doped regions in a layout view.
• A third doped region, configured as a terminal of a second diode, is coupled to an input/output pad.
• A second well of the second conductivity type surrounds the third doped region in the layout view.

Potential Applications

The technology described in the patent application could be applied in the manufacturing of electronic devices, particularly in the field of semiconductor devices for electrostatic discharge protection.

Problems Solved

This technology addresses the issue of electrostatic discharge, which can damage electronic components. By providing an efficient discharge path, the device helps protect sensitive circuits from ESD events.

Benefits

The semiconductor device offers improved protection against electrostatic discharge, enhancing the reliability and longevity of electronic devices. It provides a cost-effective solution for ESD protection in various applications.

Potential Commercial Applications

• "Enhanced Electrostatic Discharge Protection in Semiconductor Devices: Applications and Benefits"

Possible Prior Art

There may be prior art related to semiconductor devices with electrostatic discharge protection features, but specific examples are not provided in the abstract.

How does the device compare to existing ESD protection solutions in terms of efficiency and cost-effectiveness?

The article does not provide a direct comparison between the described device and other ESD protection solutions. Further research or analysis would be needed to determine the advantages of this technology over existing options.

What are the specific industries or sectors that could benefit most from implementing this technology?

While the abstract mentions the general application of the technology in semiconductor devices, it does not specify the industries or sectors where this innovation could have the most significant impact. Further exploration of potential markets would be necessary to understand the full scope of commercial opportunities.

Original Abstract Submitted

a semiconductor device is provided, including a first doped region of a first conductivity type configured as a first terminal of a first diode, a second doped region of a second conductivity type configured as a second terminal of the first diode, wherein the first and second doped regions are coupled to a first voltage terminal; a first well of the first conductivity type surrounding the first and second doped regions in a layout view; a third doped region of the first conductivity type configured as a first terminal, coupled to an input/output pad, of a second diode; and a second well of the second conductivity type surrounding the third doped region in the layout view. the second and third doped regions, the first well, and the second well are configured as a first electrostatic discharge path between the i/o pad and the first voltage terminal.