Taiwan semiconductor manufacturing company, ltd. (20240178215). INTEGRATED CIRCUIT AND MANUFACTURING METHOD THEREOF simplified abstract

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INTEGRATED CIRCUIT AND MANUFACTURING METHOD THEREOF

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Xin-Yong Wang of Shanghai City (CN)

Li-Chun Tien of Tainan City (TW)

Chih-Liang Chen of Hsinchu City (TW)

INTEGRATED CIRCUIT AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240178215 titled 'INTEGRATED CIRCUIT AND MANUFACTURING METHOD THEREOF

Simplified Explanation

The integrated circuit described in the abstract includes two transistors, each with an active region and a gate structure, as well as power lines connected to the source regions of the active regions. The first transistor is located above the second transistor, and the first power line is above the first transistor, while the second power line is below the second transistor.

  • First transistor with first active region and gate structure
  • Second transistor below the first transistor
  • First power line above the first transistor, connected to the source region of the first active region
  • Second power line below the second transistor, connected to the source region of the second active region

Potential Applications

This technology could be applied in various electronic devices such as smartphones, tablets, and computers to improve performance and efficiency.

Problems Solved

This technology helps in reducing power consumption and improving the overall functionality of integrated circuits.

Benefits

- Enhanced performance - Reduced power consumption - Improved efficiency

Potential Commercial Applications

Optimizing power management in electronic devices

Possible Prior Art

Similar integrated circuits with power lines connected to source regions have been developed in the past, but this specific configuration may be novel.

Unanswered Questions

How does this technology impact the size of the integrated circuit?

The abstract does not provide information on whether this technology affects the size of the integrated circuit.

What is the manufacturing process involved in creating this integrated circuit?

Details about the manufacturing process for this specific integrated circuit are not mentioned in the abstract.


Original Abstract Submitted

an integrated circuit includes a first transistor, a second transistor, a first power line, and a second power line. the first transistor has a first active region and a first gate structure, in which the first active region has a source region and a drain region on opposite sides of the first gate structure. the second transistor is below the first transistor, and has a second active region and a second gate structure, in which the second active region has a source region and a drain region on opposite sides of the second gate structure. the first power line is above the first transistor, in which the first power line is electrically connected to the source region of first active region. the second power line is below the second transistor, in which the second power line is electrically connected to the source region of second active region.