Taiwan semiconductor manufacturing company, ltd. (20240178132). VIA STRUCTURE HAVING LOW INTERFACE RESISTANCE simplified abstract

VIA STRUCTURE HAVING LOW INTERFACE RESISTANCE

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Li-Zhen Yu of New Taipei City (TW)

Lin-Yu Huang of Hsinchu (TW)

Cheng-Chi Chuang of New Taipei City (TW)

Yu-Ming Lin of Hsinchu City (TW)

Chih-Hao Wang of Baoshan Township (TW)

VIA STRUCTURE HAVING LOW INTERFACE RESISTANCE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240178132 titled 'VIA STRUCTURE HAVING LOW INTERFACE RESISTANCE

Simplified Explanation

The semiconductor device structure described in the abstract includes multiple layers and features that contribute to its functionality. Here is a simplified explanation of the patent application:

• The semiconductor device structure consists of a first insulating layer, a second insulating layer, and a conductive structure within the second insulating layer.
• The conductive structure includes a metal line with specific top and bottom surfaces, as well as a sidewall.
• A first metal feature is formed within a concave recess of the metal line, while a second metal feature is formed below the first insulating layer and connected to the first metal feature.

Potential Applications

The technology described in this patent application could be used in various semiconductor devices, such as integrated circuits, microprocessors, and memory chips.

Problems Solved

This technology helps in improving the performance and reliability of semiconductor devices by providing a more efficient and reliable conductive structure.

Benefits

The benefits of this technology include enhanced electrical connectivity, reduced signal interference, and improved overall device performance.

Potential Commercial Applications

The technology could find applications in the semiconductor industry for manufacturing advanced electronic devices with higher performance and reliability.

Possible Prior Art

One possible prior art for this technology could be similar semiconductor device structures with different configurations and materials used for the conductive features.

What are the specific materials used in the conductive structure of the semiconductor device?

The specific materials used in the conductive structure of the semiconductor device are not mentioned in the abstract.

How does the formation of the first metal feature within the concave recess contribute to the overall functionality of the semiconductor device?

The abstract does not provide details on how the formation of the first metal feature within the concave recess contributes to the overall functionality of the semiconductor device.

Original Abstract Submitted

a semiconductor device structure is provided. the semiconductor device structure includes a first insulating layer, a second insulating layer formed over the first insulating layer, and a conductive structure formed within the second insulating layer. the conductive structure includes a metal line having a plane top surface, a bottom surface having a first concave recess portion and a plane portion, and a sidewall adjoining the plane top surface and the plane portion of the bottom surface. the conductive structure also includes a first metal feature formed within the first concave recess. the semiconductor device structure further includes a second metal feature formed below the first insulating layer and electrically connected to the first metal feature.