Taiwan semiconductor manufacturing company, ltd. (20240178128). SEMICONDUCTOR DEVICE STRUCTURE INCLUDING FORKSHEET TRANSISTORS AND METHODS OF FORMING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE STRUCTURE INCLUDING FORKSHEET TRANSISTORS AND METHODS OF FORMING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE STRUCTURE INCLUDING FORKSHEET TRANSISTORS AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE STRUCTURE INCLUDING FORKSHEET TRANSISTORS AND METHODS OF FORMING THE SAME
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Hong-Chih Chen of Changhua (TW)
Chun-Sheng Liang of Changhua (TW)
SEMICONDUCTOR DEVICE STRUCTURE INCLUDING FORKSHEET TRANSISTORS AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240178128 titled 'SEMICONDUCTOR DEVICE STRUCTURE INCLUDING FORKSHEET TRANSISTORS AND METHODS OF FORMING THE SAME
Simplified Explanation
The semiconductor device structure described in the abstract includes multiple semiconductor layers, gate electrode layers with different conductivity types, and gate bridge and via contacts. Here is a simplified explanation of the patent application:
- The structure consists of a first dielectric wall with semiconductor layers extending outwardly from both sides.
- Each semiconductor layer is surrounded by a gate electrode layer with a specific conductivity type.
- The gate bridge contact is located on the first dielectric wall, while the gate via contact is on the gate bridge contact.
Potential Applications
This technology could be applied in the development of advanced semiconductor devices, such as high-performance transistors for electronic devices.
Problems Solved
This innovation helps in improving the performance and efficiency of semiconductor devices by providing precise control over the flow of electrical current.
Benefits
The structure allows for better integration of different semiconductor materials and enhances the overall functionality of the device.
Potential Commercial Applications
With its potential to enhance the performance of semiconductor devices, this technology could find applications in various industries, including electronics, telecommunications, and computing.
Possible Prior Art
One possible prior art could be the use of similar gate electrode structures in semiconductor devices to control the flow of electrical current.
Unanswered Questions
How does this technology compare to existing semiconductor device structures in terms of performance and efficiency?
This article does not provide a direct comparison with existing structures in terms of performance and efficiency.
What are the specific manufacturing processes involved in creating this semiconductor device structure?
The article does not delve into the specific manufacturing processes involved in creating this semiconductor device structure.
Original Abstract Submitted
a semiconductor device structure includes a first dielectric wall, a plurality of first semiconductor layers vertically stacked and extending outwardly from a first side of the first dielectric wall, a plurality of second semiconductor layers vertically stacked and extending outwardly from a second side of the first dielectric wall. the structure also includes a first gate electrode layer surrounding at least three surfaces of each of the first semiconductor layers, the first gate electrode layer having a first conductivity type, and a second gate electrode layer surrounding at least three surfaces of each of the second semiconductor layers, the second gate electrode layer having a second conductivity type opposite the first conductivity type. the structure further includes a gate bridge contact disposed on the first dielectric wall, and a gate via contact disposed on the gate bridge contact.
