Taiwan semiconductor manufacturing company, ltd. (20240178095). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Wensen Hung of Hsinchu County (TW)
Tsung-Yu Chen of Hsinchu City (TW)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240178095 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Simplified Explanation
The semiconductor device described in the abstract includes a substrate, two devices, a ring structure, a lid structure, and a first adhesive layer with phase change thermal interface material. The first device is on the substrate, the second device is adjacent to the first device, the ring structure covers the substrate and second device, the lid structure covers the ring structure and first device, and the first adhesive layer is between the lid structure and ring structure.
- Substrate, first device, second device, ring structure, lid structure, and first adhesive layer are key components of the semiconductor device.
- The ring structure includes a cover and a leg, while the lid structure includes a body and a protrusion that fits into a through opening in the cover.
- The first adhesive layer contains phase change thermal interface material, enhancing thermal conductivity between the lid structure and ring structure.
Potential Applications
The technology described in the patent application could be used in various electronic devices requiring efficient thermal management, such as smartphones, laptops, and servers.
Problems Solved
This technology addresses the challenge of heat dissipation in semiconductor devices, ensuring optimal performance and reliability by improving thermal conductivity between components.
Benefits
The use of phase change thermal interface material in the first adhesive layer enhances heat transfer efficiency, reducing the risk of overheating and extending the lifespan of electronic devices.
Potential Commercial Applications
The innovative semiconductor device design could be attractive to manufacturers of consumer electronics, data centers, and other industries where thermal management is critical for product performance.
Possible Prior Art
Prior art may include similar semiconductor device designs with different configurations of components or materials for thermal interface management.
Unanswered Questions
How does the phase change thermal interface material impact the overall performance of the semiconductor device?
The phase change thermal interface material improves heat transfer efficiency by changing phases at specific temperatures, enhancing thermal conductivity between components.
What are the potential limitations or challenges in implementing this technology in mass-produced electronic devices?
One potential challenge could be the cost of materials and manufacturing processes required for integrating phase change thermal interface material in semiconductor devices on a large scale.
Original Abstract Submitted
a semiconductor device includes a substrate, a first device, a second device, a ring structure, a lid structure, and a first adhesive layer. the first device is disposed on the substrate. the second device is adjacent to the first device and is disposed on the substrate. the ring structure is disposed over the substrate and the second device. the ring structure includes a cover and a leg extending out from the cover. the cover has a through opening. the lid structure is disposed over the ring structure and the first device. the lid structure includes a body and a protrusion protruding from the body. the protrusion of the lid structure is inserted into the through opening of the cover of the ring structure. the first adhesive layer is disposed between the body of the lid structure and the cover of the ring structure and includes phase change thermal interface material.
