Taiwan semiconductor manufacturing company, ltd. (20240178070). METHOD AND STRUCTURE FOR FINFET DEVICE simplified abstract
Contents
- 1 METHOD AND STRUCTURE FOR FINFET DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD AND STRUCTURE FOR FINFET DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does this method compare to traditional techniques for forming fin structures in semiconductor devices?
- 1.11 What are the specific performance improvements that can be expected from implementing this method in semiconductor manufacturing?
- 1.12 Original Abstract Submitted
METHOD AND STRUCTURE FOR FINFET DEVICE
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Kuo-Cheng Ching of Hsinchu County (TW)
Ying-Keung Leung of Hsin-Chu (TW)
METHOD AND STRUCTURE FOR FINFET DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240178070 titled 'METHOD AND STRUCTURE FOR FINFET DEVICE
Simplified Explanation
The present disclosure describes a method for forming fin structures over a substrate with a trench positioned between them, involving the use of dielectric layers and capping layers.
- Formation of first and second fin structures over a substrate
- Creation of a first trench between the fin structures
- Deposition of a first dielectric layer within the first trench
- Recessing the first dielectric layer to expose a portion of the first fin structure
- Application of a first capping layer over the exposed portion of the first fin structure and the recessed first dielectric layer
- Deposition of a second dielectric layer over the first capping layer in the first trench
- Removal of the first capping layer from the first fin structure
Potential Applications
This technology could be applied in the semiconductor industry for the manufacturing of advanced integrated circuits.
Problems Solved
This method helps in improving the performance and efficiency of semiconductor devices by enhancing the structure and insulation between components.
Benefits
The use of multiple dielectric layers and capping layers can lead to better isolation and reduced interference in semiconductor devices, resulting in higher functionality and reliability.
Potential Commercial Applications
The technology could be utilized in the production of high-performance processors, memory chips, and other semiconductor devices for various electronic applications.
Possible Prior Art
Prior art may include similar methods for forming fin structures and dielectric layers in semiconductor manufacturing processes.
Unanswered Questions
How does this method compare to traditional techniques for forming fin structures in semiconductor devices?
This article does not provide a direct comparison to traditional methods, leaving the reader to wonder about the specific advantages or differences.
What are the specific performance improvements that can be expected from implementing this method in semiconductor manufacturing?
The article does not delve into the exact performance enhancements that can be achieved by using this technology, leaving room for further exploration and research in this area.
Original Abstract Submitted
the present disclosure provides a method, which includes forming a first fin structure and a second fin structure over a substrate, which has a first trench positioned between the first and second fin structures. the method also includes forming a first dielectric layer within the first trench, recessing the first dielectric layer to expose a portion of the first fin structure, forming a first capping layer over the exposed portion of the first fin structure and the recessed first dielectric layer in the first trench, forming a second dielectric layer over the first capping layer in the first trench while the first capping layer covers the exposed portion of the first fin feature and removing the first capping layer from the first fin structure.
