Taiwan semiconductor manufacturing company, ltd. (20240178059). REDUCING OXIDATION BY ETCHING SACRIFICIAL AND PROTECTION LAYER SEPARATELY simplified abstract
Contents
- 1 REDUCING OXIDATION BY ETCHING SACRIFICIAL AND PROTECTION LAYER SEPARATELY
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 REDUCING OXIDATION BY ETCHING SACRIFICIAL AND PROTECTION LAYER SEPARATELY - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
REDUCING OXIDATION BY ETCHING SACRIFICIAL AND PROTECTION LAYER SEPARATELY
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Chia Cheng Chou of Keelung City (TW)
REDUCING OXIDATION BY ETCHING SACRIFICIAL AND PROTECTION LAYER SEPARATELY - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240178059 titled 'REDUCING OXIDATION BY ETCHING SACRIFICIAL AND PROTECTION LAYER SEPARATELY
Simplified Explanation
The patent application describes a structure with multiple features including conductive layers, etch stop layers, dielectric layers, air spacers, and protection rings. The structure is designed to improve the performance and reliability of electronic devices.
- The structure includes a first conductive feature, a first etch stop layer, a dielectric layer, and a second conductive feature.
- The second conductive feature is in contact with the first conductive feature and is surrounded by an air spacer.
- The protection ring encircles the second conductive feature and separates it from the air spacer.
Potential Applications
This technology could be applied in the manufacturing of advanced electronic devices, such as integrated circuits, sensors, and memory devices.
Problems Solved
This technology helps to improve the performance and reliability of electronic devices by providing better isolation and protection for the conductive features.
Benefits
The structure offers enhanced functionality, increased durability, and improved efficiency for electronic devices.
Potential Commercial Applications
- "Enhancing Electronic Device Performance with Innovative Structure"
Possible Prior Art
There may be prior art related to similar structures used in the semiconductor industry, but specific examples are not provided in the patent application.
Unanswered Questions
How does this technology compare to existing solutions in terms of cost-effectiveness?
This article does not address the cost implications of implementing this technology. Further research or analysis would be needed to determine the cost-effectiveness compared to other solutions.
What are the potential limitations or challenges in scaling up this technology for mass production?
The article does not discuss any challenges or limitations in scaling up this technology for mass production. Additional studies or experiments may be required to address this aspect.
Original Abstract Submitted
a structure includes a first conductive feature, a first etch stop layer over the first conductive feature, a dielectric layer over the first etch stop layer, and a second conductive feature in the dielectric layer and the first etch stop layer. the second conductive feature is over and contacting the first conductive feature. an air spacer encircles the second conductive feature, and sidewalls of the second conductive feature are exposed to the air spacer. a protection ring further encircles the second conductive feature, and the protection ring fully separates the second conductive feature from the air spacer.
