Taiwan semiconductor manufacturing company, ltd. (20240178052). REPLACEMENT MATERIAL FOR BACKSIDE GATE CUT FEATURE simplified abstract
Contents
- 1 REPLACEMENT MATERIAL FOR BACKSIDE GATE CUT FEATURE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 REPLACEMENT MATERIAL FOR BACKSIDE GATE CUT FEATURE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
REPLACEMENT MATERIAL FOR BACKSIDE GATE CUT FEATURE
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Wang-Chun Huang of Hsinchu (TW)
Hou-Yu Chen of Hsinchu County (TW)
Chih-Hao Wang of Hsinchu County (TW)
Kuan-Lun Cheng of Hsin-Chu (TW)
REPLACEMENT MATERIAL FOR BACKSIDE GATE CUT FEATURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240178052 titled 'REPLACEMENT MATERIAL FOR BACKSIDE GATE CUT FEATURE
Simplified Explanation
The semiconductor structure described in the abstract includes a substrate, first and second gate structures, and an isolation feature between the gate structures. The isolation feature extends through the substrate and has a top surface above the topmost surface of the first gate structure.
- The semiconductor structure includes:
- Substrate
- First gate structure
- Second gate structure
- Isolation feature
- Isolation feature extends through the substrate
- Top surface of isolation feature is above the topmost surface of the first gate structure
Potential Applications
The technology described in this patent application could be used in:
- Semiconductor manufacturing
- Integrated circuit design
- Electronics industry
Problems Solved
This technology helps in:
- Improving isolation between gate structures
- Enhancing performance of semiconductor devices
- Reducing interference between components
Benefits
The benefits of this technology include:
- Increased efficiency in semiconductor devices
- Enhanced reliability of integrated circuits
- Improved overall performance of electronic devices
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Mobile devices
- Computer hardware
- Automotive electronics
Possible Prior Art
One possible prior art for this technology could be:
- Isolation features in semiconductor structures
- Gate structures in integrated circuits
Unanswered Questions
How does this technology impact the power consumption of electronic devices?
The article does not mention the specific impact of this technology on power consumption.
Are there any limitations to the size or scale at which this technology can be implemented?
The article does not address any limitations regarding the size or scale of implementation for this technology.
Original Abstract Submitted
a semiconductor structure includes a substrate, a first gate structure and a second gate structure disposed over the substrate, and an isolation feature extending through the substrate and disposed between the first gate structure and the second gate structure. a top surface of the isolation feature is above a topmost surface of the first gate structure.
