Taiwan semiconductor manufacturing company, ltd. (20240178005). SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Chih-Piao Chuu of Hsinchu City (TW)
Ming-Yang Li of Hsinchu City (TW)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240178005 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Simplified Explanation
The method of fabricating a semiconductor device involves applying a plasma to a portion of a metal dichalcogenide film, followed by forming a metal layer over the film. The metal dichalcogenide film consists of a first metal and a chalcogen selected from S, Se, Te, or combinations thereof.
- Plasma applied to metal dichalcogenide film
- Metal layer formed over the film
- Metal dichalcogenide film contains first metal and chalcogen
- Chalcogen selected from S, Se, Te, or combinations thereof
Potential Applications
This technology could be applied in the manufacturing of advanced semiconductor devices, such as transistors and sensors.
Problems Solved
This method helps in improving the performance and efficiency of semiconductor devices by enhancing the properties of the metal dichalcogenide film.
Benefits
- Enhanced semiconductor device performance - Improved efficiency - Advanced manufacturing capabilities
Potential Commercial Applications
"Advanced Semiconductor Device Fabrication Using Plasma Treatment and Metal Layer Deposition"
Possible Prior Art
There may be prior art related to methods of fabricating semiconductor devices using metal dichalcogenide films and plasma treatment. Further research is needed to identify specific examples.
=== What are the specific metals used in the metal layer and metal dichalcogenide film? The metal layer includes a second metal, while the metal dichalcogenide film contains a first metal.
=== How does the plasma treatment impact the properties of the metal dichalcogenide film? The plasma treatment helps in modifying the surface properties of the metal dichalcogenide film, which can influence its electrical and structural characteristics.
Original Abstract Submitted
a method of fabricating a semiconductor device includes applying a plasma to a portion of a metal dichalcogenide film. the metal dichalcogenide film includes a first metal and a chalcogen selected from the group consisting of s, se, te, and combinations thereof. a metal layer including a second metal is formed over the portion of the metal dichalcogenide film after applying the plasma.
