Taiwan semiconductor manufacturing company, ltd. (20240177998). Transistor Gate Structure and Method of Forming simplified abstract
Contents
- 1 Transistor Gate Structure and Method of Forming
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Transistor Gate Structure and Method of Forming - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
Transistor Gate Structure and Method of Forming
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Cheng-Lung Hung of Hsinchu (TW)
Transistor Gate Structure and Method of Forming - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240177998 titled 'Transistor Gate Structure and Method of Forming
Simplified Explanation
The patent application describes a device with nanostructures, high-k gate dielectric, and a gate electrode for improved performance.
- The device includes a first nanostructure and a second nanostructure stacked on top of each other.
- A high-k gate dielectric surrounds the nanostructures, with a portion on the top surface of the first nanostructure and a portion on the bottom surface of the second nanostructure.
- The gate electrode consists of a first work function metal filling the region between the high-k gate dielectric portions and a tungsten layer on top, free of fluorine.
Potential Applications
This technology could be applied in the development of advanced transistors for high-performance electronic devices, such as smartphones, computers, and other semiconductor devices.
Problems Solved
This innovation addresses the challenge of improving the performance and efficiency of electronic devices by optimizing the structure and materials used in the fabrication of transistors.
Benefits
The device offers enhanced performance, lower power consumption, and increased reliability compared to traditional transistor designs.
Potential Commercial Applications
The technology could be valuable in the semiconductor industry for manufacturing next-generation electronic devices with improved speed and efficiency.
Possible Prior Art
One possible prior art could be the use of high-k gate dielectrics and metal gate electrodes in transistor technology to enhance device performance and reduce power consumption.
Unanswered Questions
How does this technology compare to existing transistor designs in terms of power efficiency and performance?
This article does not provide a direct comparison with existing transistor designs to evaluate the specific improvements in power efficiency and performance offered by this technology.
What are the potential challenges or limitations of implementing this technology on a large scale in semiconductor manufacturing processes?
The article does not address the potential challenges or limitations that may arise when scaling up the production of devices incorporating this technology in semiconductor manufacturing processes.
Original Abstract Submitted
a device includes a first nanostructure; a second nanostructure over the first nanostructure; a high-k gate dielectric around the first nanostructure and the second nanostructure, the high-k gate dielectric having a first portion on a top surface of the first nanostructure and a second portion on a bottom surface of the second nanostructure; and a gate electrode over the high-k gate dielectric. the gate electrode comprises: a first work function metal around the first nanostructure and the second nanostructure, the first work function metal filling a region between the first portion of the high-k gate dielectric and the second portion of the high-k gate dielectric; and a tungsten layer over the first work function metal, the tungsten layer being free of fluorine.
